FX6ASJ-3 Renesas Electronics Corporation., FX6ASJ-3 Datasheet - Page 4

• Manufacturer Part Number: FX6ASJ-3
• Description: High-speed Switching Use Nch Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

FX6ASJ-3
Rev.2.00
Aug 07, 2006
–10
–20
–16
–12
10
10
–8
–4
–8
–6
–4
–2
0
0
3
2
7
5
3
2
7
5
3
3
2
–10
0
0
Transfer Characteristics (Typical)
Tc = 25°C
V
Pulse Test
0
Tch = 25°C
f = 1MHz
V
Tch = 25°C
I
Gate-Source Voltage V
Drain-Source Voltage V
D
Drain-Source Voltage (Typical)
DS
GS
= –6A
–2 –3
Gate-Source Voltage vs.
= –10V
–2
= 0V
10
Gate Charge Qg (nC)
Gate Charge (Typical)
Capacitance vs.
–5 –7
page 4 of 6
–4
20
–10
1
–6
30
–2 –3
–100V
–80V
V
DS
GS
DS
–8
40
= –50V
–5 –7
(V)
(V)
Ciss
Coss
Crss
–10
–10
50
2
–20
–16
–12
10
10
10
10
10
–8
–4
0
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
1
0
3
2
1
–7
–7
0
Switching Characteristics (Typical)
–10
–10
V
Pulse Test
Forward Transfer Admittance vs.
V
Pulse Test
Source-Drain Voltage V
Tch = 25°C
V
V
R
DS
GS
DD
GS
GEN
Source-Drain Diode Forward
–1
–1
–0.4
= –10V
Characteristics (Typical)
= –80V
= –10V
= 0V
Drain Current (Typical)
–2 –3
–2 –3
Drain Current I
Drain Current I
= R
GS
–0.8
= 50Ω
Tc = 25°C
–5 –7
–5 –7
125°C
75°C
–10
–10
–1.2
0
0
D
D
25°C
T
75°C
–2 –3
–2 –3
C
(A)
(A)
–1.6
= 125°C
SD
t
t
t
t
d(off)
f
r
d(on)
(V)
–5 –7
–5 –7
–2.0