FX6ASJ-3 Renesas Electronics Corporation., FX6ASJ-3 Datasheet - Page 2

• Manufacturer Part Number: FX6ASJ-3
• Description: High-speed Switching Use Nch Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
FX6ASJ-3
Electrical Characteristics
Rev.2.00
Aug 07, 2006
Parameter
page 2 of 6
Symbol
V
V
R
V
r
r
Coss
| y
(BR)DSS
DS(ON)
DS(ON)
Crss
Ciss
t
t
I
I
DS(ON)
V
th(ch-c)
GS(th)
d(on)
d(off)
GSS
DSS
t
t
t
SD
rr
fs
r
f
|
–150
–1.3
Min
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
–1.23
2420
–1.8
0.41
0.45
–1.0
Typ
152
156
100
7.9
69
14
18
58
—
—
—
—
–1.59
Max
–0.1
–2.3
0.53
0.59
–1.5
3.57
—
—
—
—
—
—
—
—
—
—
0.1
Unit
C/W
mA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
S
V
A
I
V
V
I
I
I
I
I
V
f = 1MHz
V
V
R
I
Channel to case
I
D
D
D
D
D
D
S
S
GS
DS
DS
DD
GS
GEN
= –3 A, V
= –6 A, d
= –1 mA, V
= –1 mA, V
= –3 A, V
= –3 A, V
= –3 A, V
= –3 A, V
= –150 V, V
= –10 V, V
= 20 V, V
= –80 V, I
= –10 V,
Test Conditions
= R
GS
is
GS
GS
GS
GS
DS
= 50
/d
(Tch = 25°C)
GS
DS
D
= – 10 V
= 0 V
t
= –10 V
= – 4 V
= –10 V
GS
DS
= 100 A/ s
= –3 A,
GS
= 0 V
= –10 V
= 0 V
= 0 V,
= 0 V