NP110N055PUG Renesas Electronics Corporation., NP110N055PUG Datasheet - Page 4

• Manufacturer Part Number: NP110N055PUG
• Description: Switching N-channel Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

4
500
400
300
200
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0
4
3
2
1
0
5
4
3
2
1
0
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
-100
0
1
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
-50
0.2
T
DS
ch
- Drain to Source Voltage - V
- Channel Temperature - °C
I
D
0.4
- Drain Current - A
10
0
V
GS
= 10 V
0.6
50
100
0.8
100
V
Pulsed
V
I
D
GS
DS
= 250 µA
150
= 10 V
= V
1
Pulsed
GS
Data Sheet D16853EJ1V0DS
1000
200
1.2
1000
0.001
100
1000
0.01
10
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0.1
1
10
5
4
3
2
1
0
1
1
0
FORWARD TRANSFER CHARACTERISTICS
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
0
V
Pulsed
22 A
V
Pulsed
DS
DS
V
= 10 V
= 10 V
GS
T
V
1
5
A
GS
- Gate to Source Voltage - V
= −55°C
I
- Gate to Source Voltage - V
D
−25°C
125°C
150°C
175°C
I
D
25°C
85°C
10
- Drain Current - A
= 110 A
2
10
55 A
3
NP110N055PUG
15
100
4
T
A
20
= −55°C
Pulsed
125°C
175°C
5
25°C
85°C
1000
25
6