NP110N055PUG Renesas Electronics Corporation., NP110N055PUG Datasheet - Page 2

• Manufacturer Part Number: NP110N055PUG
• Description: Switching N-channel Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
V
TEST CIRCUIT 3 GATE CHARGE
2
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
GS
= 20
PG.
→
0 V
CHARACTERISTICS
PG.
I
G
V
= 2 mA
50
DD
R
Ω
D.U.T.
G
I
D
= 25
50
I
D.U.T.
Ω
AS
Ω
Note
Note
BV
DSS
Note
Starting T
R
V
Note
DD
V
L
DS
L
V
DD
ch
SYMBOL
R
V
V
| y
C
t
t
Q
Q
I
I
C
C
GS(th)
DS(on)
d(on)
d(off)
Q
F(S-D)
Q
DSS
GSS
t
t
t
oss
A
iss
rss
GS
GD
rr
fs
r
f
G
rr
|
= 25°C)
Data Sheet D16853EJ1V0DS
V
V
V
V
V
V
V
f = 1 MHz
V
V
R
V
V
I
I
I
di/dt = 100 A/
V
0
D
F
F
DS
GS
DS
DS
GS
DS
GS
DD
GS
DD
GS
GS
G
= 110 A, V
= 110 A, V
τ = 1 s
Duty Cycle
= 110 A
= 0 Ω
= 55 V, V
= V
= 10 V, I
= 25 V
= ±20 V, V
= 10 V, I
= 0 V
= 28 V, I
= 10 V
= 44 V
= 10 V
TEST CIRCUIT 2 SWITCHING TIME
PG.
µ
GS
τ
, I
TEST CONDITIONS
D
D
D
D
≤
GS
GS
= 250
µ
GS
= 55 A
= 55 A
= 55 A
1%
s
DS
= 0 V
= 0 V
= 0 V
R
= 0 V
G
D.U.T.
µ
A
R
V
DD
L
V
Wave Form
V
Wave Form
GS
DS
MIN.
2.0
42
V
V
V
GS
DS
0
DS
0
17100 25700
TYP.
1120
10%
t
725
201
131
251
NP110N055PUG
3.0
1.9
0.9
90%
d(on)
83
63
19
63
81
58
87
t
on
10% 10%
t
MAX.
±100
1680
1310
r
140
510
270
380
4.0
2.4
1.5
50
1
V
GS
t
d(off)
UNIT
t
mΩ
off
µ
nA
pF
pF
pF
nC
nC
nC
nC
90%
ns
ns
ns
ns
ns
V
S
V
A
90%
t
f