NP110N055PUG Renesas Electronics Corporation., NP110N055PUG Datasheet

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NP110N055PUG

Manufacturer Part Number
NP110N055PUG
Description
Switching N-channel Power Mos Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Part Number
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Quantity
Price
Part Number:
NP110N055PUG
Manufacturer:
MOT/ON
Quantity:
12 500
Document No. D16853EJ1V0DS00 (1st edition)
Date Published September 2004 NS CP(K)
Printed in Japan
• Channel temperature 175 degree rating
• Super low on-state resistance
• Low C
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Repetitive Avalanche Current
Repetitive Avalanche Energy
Notes 1. PW ≤ 10
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
DESCRIPTION
Transistor designed for high current switching applications.
FEATURES
The NP110N055PUG is N-channel MOS Field Effect
R
DS(on)
2. T
iss
= 2.4 mΩ MAX. (V
: C
ch
iss
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
≤ 150°C, V
= 17100 pF TYP.
µ
s, Duty Cycle ≤ 1%
Note1
C
= 25°C)
DD
DS
A
C
GS
GS
= 28 V, R
= 25°C)
= 25°C)
= 0 V)
Note2
= 0 V)
= 10 V, I
Note2
N-CHANNEL POWER MOS FET
G
D
= 25 Ω, V
= 55 A)
A
R
R
I
= 25°C)
D(pulse)
V
V
I
DATA SHEET
th(ch-C)
th(ch-A)
D(DC)
T
E
P
P
T
I
GSS
DSS
AR
stg
AR
T1
T2
ch
GS
SWITCHING
= 20 → 0 V
−55 to +175
MOS FIELD EFFECT TRANSISTOR
±110
±440
0.52
83.3
±20
288
175
435
1.8
55
66
ORDERING INFORMATION
NP110N055PUG
NP110N055PUG
PART NUMBER
°C/W
°C/W
mJ
°C
°C
W
W
V
V
A
A
A
TO-263 (MP-25ZP)
PACKAGE
(TO-263)
2004

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NP110N055PUG Summary of contents

Page 1

... DESCRIPTION The NP110N055PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Channel temperature 175 degree rating • Super low on-state resistance R = 2.4 mΩ MAX DS(on) GS • Low 17100 pF TYP. iss iss ABSOLUTE MAXIMUM RATINGS (T ...

Page 2

... µ Q di/dt = 100 TEST CIRCUIT 2 SWITCHING TIME D.U. PG τ τ µ ≤ Duty Cycle 1% Data Sheet D16853EJ1V0DS NP110N055PUG MIN. TYP. MAX. UNIT µ ±100 nA 2.0 3.0 4 1.9 2.4 mΩ 17100 25700 pF 1120 1680 pF 725 ...

Page 3

... TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 300 250 200 150 100 150 175 100 R th(ch-A) R th(ch- 100 Pulse Width - s Data Sheet D16853EJ1V0DS NP110N055PUG 50 75 100 125 150 175 - Case Temperature - ° 83.3°C/W = 0.52°C/W Single pulse 100 1000 3 ...

Page 4

... DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 5 Pulsed 1000 V GS Data Sheet D16853EJ1V0DS NP110N055PUG = −55°C A −25°C 25°C 85°C 125°C 150°C 175° Gate to Source Voltage - −55°C A 25° ...

Page 5

... 100 1000 Q - Gate Charge - nC G REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 100 10 1.5 0 Diode Forward Current - A F Data Sheet D16853EJ1V0DS NP110N055PUG MHz C iss C oss C rss 1 10 100 ...

Page 6

... Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 6 1.3 ±0.2 0.025 to 0.25 Data Sheet D16853EJ1V0DS NP110N055PUG ...

Page 7

... NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). NP110N055PUG M8E 02. 11-1 ...

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