NP110N04PDG Renesas Electronics Corporation., NP110N04PDG Datasheet - Page 6

• Manufacturer Part Number: NP110N04PDG
• Description: Switching N-channel Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

PACKAGE DRAWING (Unit: mm)
TO-263 (MP-25ZP)
6
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
0.75 ±0.2
EQUIVALENT CIRCUIT
Gate
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
10.0 ±0.3
1
2
2.54
0.5
4
3
Source
Drain
Body
Diode
1. Gate
2. Drain
3. Source
4. Fin (Drain)
4.45 ±0.2
0.25
1.3 ±0.2
0.025
to 0.25
Data Sheet D17561EJ2V0DS
NP110N04PDG