NP110N04PDG Renesas Electronics Corporation., NP110N04PDG Datasheet

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NP110N04PDG

Manufacturer Part Number
NP110N04PDG
Description
Switching N-channel Power Mos Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Document No. D17561EJ2V0DS00 (2nd edition)
Date Published June 2006 NS CP(K)
Printed in Japan
<R>
ORDERING INFORMATION
Note See “TAPE INFORMATION”
• Channel temperature 175 degree rating
• Super low on-state resistance
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Repetitive Avalanche Current
Repetitive Avalanche Energy
Notes 1. PW ≤ 10
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
DESCRIPTION
FEATURES
The NP110N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
R
R
NP110N04PDG-E1-AZ
NP110N04PDG-E2-AZ
DS(on)1
DS(on)2
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2. T
PART NUMBER
= 1.8 mΩ MAX. (V
= 3.2 mΩ MAX. (V
ch
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
≤ 150°C, V
μ
s, Duty Cycle ≤ 1%
Note1
C
= 25°C)
Note
Note
DD
DS
A
C
GS
= 20 V, R
GS
GS
= 25°C)
= 25°C)
= 0 V)
Note2
= 0 V)
Note2
= 10 V, I
= 4.5 V, I
LEAD PLATING
N-CHANNEL POWER MOS FET
Pure Sn (Tin)
G
= 25 Ω, V
D
D
The mark <R> shows major revised points.
= 55 A)
= 55 A)
A
R
R
I
= 25°C)
D(pulse)
V
V
I
DATA SHEET
th(ch-C)
th(ch-A)
D(DC)
T
E
P
P
T
I
GSS
DSS
AR
stg
AR
T1
T2
ch
GS
SWITCHING
= 20 → 0 V
800 p/reel
−55 to +175
PACKING
MOS FIELD EFFECT TRANSISTOR
Tape
±110
±440
0.52
83.3
±20
288
175
518
1.8
40
72
NP110N04PDG
TO-263 (MP-25ZP)
°C/W
°C/W
mJ
°C
°C
W
W
V
V
A
A
A
PACKAGE
typ. 1.5 g
(TO-263)
2005

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NP110N04PDG Summary of contents

Page 1

... DESCRIPTION The NP110N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION <R> PART NUMBER Note NP110N04PDG-E1-AZ Note NP110N04PDG-E2-AZ Note See “TAPE INFORMATION” FEATURES • Channel temperature 175 degree rating • Super low on-state resistance R = 1.8 mΩ MAX. (V ...

Page 2

... μ Q di/dt = 100 TEST CIRCUIT 2 SWITCHING TIME D.U. PG τ τ μ ≤ Duty Cycle 1% Data Sheet D17561EJ2V0DS NP110N04PDG MIN. TYP. MAX. UNIT μ ±100 nA 1.5 2.0 2 1.4 1.8 mΩ 2.1 3.2 mΩ 14500 25700 pF 1360 2130 ...

Page 3

... DC 10 100 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 Pulse Width - s Data Sheet D17561EJ2V0DS NP110N04PDG TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 100 125 150 175 - Case Temperature - ° 83.3°C/W th(ch- 0.52°C/W th(ch-C) ...

Page 4

... D 1 0.1 150 200 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 1000 Data Sheet D17561EJ2V0DS NP110N04PDG = − 55° 25°C 75°C 150°C 175° Pulsed Gate to Source Voltage - V GS 25°C 75° ...

Page 5

... 1000 Gate Charge - nC G REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 100 10 1 1.5 0 Diode Forward Current - A F Data Sheet D17561EJ2V0DS NP110N04PDG MHz C iss C oss C rss 1 10 100 ...

Page 6

... Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 6 1.3 ±0.2 0.025 to 0.25 Data Sheet D17561EJ2V0DS NP110N04PDG ...

Page 7

... MARKING INFORMATION <R> RECOMMENDED SOLDERING CONDITIONS The NP110N04PDG should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) ...

Page 8

... NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). NP110N04PDG Not all M8E 02. 11-1 ...

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