NP110N04PDG Renesas Electronics Corporation., NP110N04PDG Datasheet - Page 3

• Manufacturer Part Number: NP110N04PDG
• Description: Switching N-channel Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

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TYPICAL CHARACTERISTICS (T
1000
120
100
100
80
60
40
20
0.1
10
0
1
0.1
0
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
FORWARD BIAS SAFE OPERATING AREA
T
Single pulse
C
= 25°C
25
V
DS
T
I
D(DC)
C
- Drain to Source Voltage - V
- Case Temperature - °C
50
0.001
1000
= 110 A
0.01
100
1
I
0.1
D(pulse)
10
1
75
100
= 440 A
μ
100 125
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
10
1 m
A
= 25°C)
150 175
10 ms
1 ms
DC
Data Sheet D17561EJ2V0DS
10 m
100
100 m
PW - Pulse Width - s
300
250
200
150
100
1
50
0
0
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
25
10
R
R
T
th(ch-A)
th(ch-C)
C
- Case Temperature - °C
50
= 83.3°C/W
= 0.52°C/W
Single pulse
100
75
100
NP110N04PDG
1000
125
150
175
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