TIM7179-60SL TOSHIBA Semiconductor CORPORATION, TIM7179-60SL Datasheet
TIM7179-60SL
Manufacturer Part Number
TIM7179-60SL
Description
Microwave Power Gaas Fet
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TIM7179-60SL.pdf
(4 pages)
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MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 ° C )
ELECTRICAL CHARACTERISTICS ( Ta= 25 ° C )
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3rd Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use.
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
FEATURES
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Recommended Gate Resistance(Rg) : 28 Ω (Max.)
LOW INTERMODULATION DISTORTION
HIGH POWER
IM3=-45 dBc at Pout= 36.5dBm
Single Carrier Level
P1dB=48.0dBm at 7.1GHz to 7.9GHz
CHARACTERISTICS
CHARACTERISTICS
SYMBOL
SYMBOL
R
V
V
G
P
ΔTch
I
I
η
I
th(c-c)
IM
GSoff
DS1
DS2
DSS
ΔG
gm
GSO
1dB
1dB
add
3
(VDS X IDS + Pin – P1dB)
V
I
V
I
V
V
I
Channel to Case
(Single Carrier Level)
DS
DS
GS
DS
DS
DS
GS
f = 7.1 to 7.9GHz
Two-Tone Test
CONDITIONS
CONDITIONS
= 12.0A
= 200mA
Po=36.5dBm
= -1.0mA
I
= 3V
=
=
= 0V
DS
V
X Rth(c-c)
3V
3V
DS
set=9.5A
HIGH GAIN
G1dB=6.5dB at 7.1GHz to 7.9GHz
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
=10V
TIM7179-60SL
Preliminary
UNIT
UNIT
° C/W
dBm
dBc
dB
dB
° C
%
A
A
S
V
A
V
MIN.
47.0
MIN.
-1.0
-42
5.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-5
TYP. MAX.
48.0
13.2
TYP. MAX.
-45
Rev. Jul. 2007
6.5
-1.8
37
0.6
⎯
⎯
⎯
20
38
⎯
15.0
±0.8
11.8
100
-3.0
⎯
⎯
⎯
⎯
0.8
⎯
⎯
⎯
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TIM7179-60SL Summary of contents
Page 1
... 12. GSoff 200mA DSS -1.0mA GSO GS R Channel to Case th(c-c) TIM7179-60SL Preliminary UNIT MIN. TYP. MAX. dBm 47.0 48.0 dB 5.5 6.5 ⎯ A 13.2 ⎯ ⎯ dB ⎯ dBc -42 -45 ⎯ ⎯ A ° C ⎯ ⎯ UNIT MIN. TYP. MAX. ⎯ ...
Page 2
... Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage Temperature PACKAGE OUTLINE (2-16G1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM7179-60SL SYMBOL ...
Page 3
... RF PERFORMANCE Output Power (Pout) vs. Frequency VDS=10V IDS≅13.2A 49 Pin=41.5dBm Output Power(Pout) vs. Input Power(Pin) 51 freq.=7.9GHz 50 V =10V DS I set≅9. TIM7179-60SL 7.1 7.5 Frequency(GHz) Pout ηadd 39 41 Pin(dBm ...
Page 4
... Power Dissipation(PT) vs. Case Temperature(Tc) 200 100 IM3 vs. Power Characteristics -10 V =10V DS I set≅9.5A DS freq.=7.9GHz -20 Δf=5MHz -30 -40 -50 - Pout(dBm) @Single carrier level TIM7179-60SL 80 120 Tc( ° 200 160 40 42 ...