TIM7179-35SL TOSHIBA Semiconductor CORPORATION, TIM7179-35SL Datasheet
TIM7179-35SL
Manufacturer Part Number
TIM7179-35SL
Description
Microwave Power Gaas Fet
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TIM7179-35SL.pdf
(4 pages)
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Part Number:
TIM7179-35SL
Manufacturer:
TOSHIBA
Quantity:
5 000
u The information contained herein is presented only as a guide for the applications of our products. No responsibility is
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
n LOW INTERMODULATION DISTORTION n HIGH GAIN
n HIGH POWER
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )
ELECTRICAL CHARACTERISTICS ( Ta= 25 C )
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3rd Order Intermodulation
Distortion
Channel Temperature Rise
Recommended Gate Resistance(Rg): 28
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use.
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
FEATURES
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
IM3=-45 dBc at Pout= 35.5dBm
Single Carrier Level
P1dB=46.5dBm at 6.4GHz to 7.2GHz
CHARACTERISTICS
CHARACTERISTICS
SYMBOL
SYMBOL
R
V
V
G
P
I
th(c-c)
IM
GSoff
I
DSS
gm
GSO
DS
Tch
1dB
1dB
add
G
3
(VDS X IDS + Pin – P1dB)
V
I
V
I
V
V
I
Channel to Case
(Single Carrier Level)
DS
DS
GS
DS
DS
DS
GS
f = 6.4 to 7.2GHz
Two-Tone Test
CONDITIONS
CONDITIONS
= 11.0A
= 170mA
= -500 A
Po=35.5dBm
(Max.)
= 3V
= 3V
= 3V
= 0V
n BROAD BAND INTERNALLY MATCHED FET
n HERMETICALLY SEALED PACKAGE
VDS=10V
X Rth(c-c)
G1dB=8.0dB at 6.4GHz to 7.2GHz
MICROWAVE POWER GaAs FET
TIM6472-45SL
UNIT
UNIT
dBm
dBc
C/W
mS
dB
dB
%
A
V
A
V
C
MIN.
46.0
MIN.
-1.0
-42
7.0
-5
TYP. MAX.
46.5
TYP. MAX.
8000
8.0
9.6
-45
-2.5
37
Rev. Jul. 2006
0.8
24
10.8
100
-4.0
0.8
1.2
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TIM7179-35SL Summary of contents
Page 1
MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION n HIGH GAIN IM3=-45 dBc at Pout= 35.5dBm Single Carrier Level n HIGH POWER P1dB=46.5dBm at 6.4GHz to 7.2GHz RF PERFORMANCE SPECIFICATIONS ( Ta CHARACTERISTICS Output Power at ...
Page 2
ABSOLUTE MAXIMUM RATINGS ( Ta CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc Channel Temperature Storage Temperature PACKAGE OUTLINE (2-16G1B) 4 – C1.0 (2) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should ...
Page 3
RF PERFORMANCE Output Power (Pout) vs. Frequency V =10V DS I 9.6A DS Pin=38.5dBm 6.4 6.5 Output Power(Pout) vs. Input Power(Pin) 49 freq.=7.2GHz 48 V =10V ...
Page 4
Power Dissipation(PT) vs. Case Temperature(Tc) 130 110 IM3 vs. Output Power Characteristics -10 V =10V DS I 9.6A DS freq.=7.2GHz -20 f=5MHz -30 -40 -50 - Pout(dBm) @Single carrier level TIM6472-45SL 80 ...