TIM7179-4UL TOSHIBA Semiconductor CORPORATION, TIM7179-4UL Datasheet
TIM7179-4UL
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TIM7179-4UL Summary of contents
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... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM7179-4UL n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE SYMBOL ...
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... Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc Channel Temperature Storage PACKAGE OUTLINE (2-11D1B) 4-C1.2 (2) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 C. TIM7179-4UL SYMBOL ...
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... RF PERFORMANCE 10V Pin= 27.5dBm 6 7.5GHz V = 10V 1. TIM7179-4UL Output Power vs. Frequency 7.2 7.4 7.6 Frequency (GHz) Output Power vs. Input Power Po ηadd Pin (dBm) 3 7 ...
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... TIM7179-4UL Power Dissipation vs. Case Temperature (℃) IM3 vs. Output Power Characteristics - 10V 7.5GHz f= 5MHz -30 -40 -50 - Po(dBm), Single Carrier Level 120 160 200 ...