MBM29SL160TD Fujitsu Microelectronics, Inc., MBM29SL160TD Datasheet - Page 32

• Manufacturer Part Number: MBM29SL160TD
• Description: Flash Memory 16m 2m X 8/1m X 16 Bit
• Manufacturer: Fujitsu Microelectronics, Inc.

32
MBM29SL160TD
Notes: Test Conditions:
JEDEC
• Read Only Operations Characteristics
AC CHARACTERISTICS
t
t
t
t
t
t
t
GHQZ
AVQV
ELQV
GLQV
EHQZ
AXQX
AVAV
—
—
Parameter
Symbols
Output Load:1 TTL gate and 30 pF (MBM29SL160TD/BD-10)
Input rise and fall times: 5 ns
Input pulse levels: 0.0 V to V
Timing measurement reference level
Standard
Notes: C
t
t
READY
t
t
Input: 0.5 x V
Output: 0.5 x V
ELFH
t
t
t
t
ELFL
ACC
t
t
RC
OE
OH
CE
DF
DF
1 TTL gate and 100 pF (MBM29SL160TD/BD-12)
C
L
L
= 30 pF including jig capacitance (MBM29SL160TD/BD-10)
= 100 pF including jig capacitance (MBM29SL160TD/BD-12)
Read Cycle Time
Address to Output Delay
Chip Enable to Output Delay
Output Enable to Output Delay
Chip Enable to Output High-Z
Output Enable to Output High-Z
Output Hold Time From
Addresses,
CE or OE, Whichever Occurs First
RESET Pin Low to Read Mode
CE or BYTE Switching Low or
High
CC
CC
-10/-12
Description
CC
Device
Under
Test
/MBM29SL160BD
Figure 4
C
L
Test Conditions
CE = V
OE = V
OE = V
Test Setup
—
—
—
—
—
—
—
IN3064
or Equivalent
6.2 k
IL
IL
IL
Max.
Max.
Max.
Max.
Max.
Max.
Max.
Min.
Min.
-10/-12
V
CC
2.7 k
(Note)
100
100
100
-10
35
30
30
20
0
5
Diodes = IN3064
or Equivalent
(Note)
120
120
120
-12
50
40
40
20
0
5
Unit
ns
ns
ns
ns
ns
ns
ns
ns
s