MBM29SL160TD Fujitsu Microelectronics, Inc., MBM29SL160TD Datasheet - Page 31

• Manufacturer Part Number: MBM29SL160TD
• Description: Flash Memory 16m 2m X 8/1m X 16 Bit
• Manufacturer: Fujitsu Microelectronics, Inc.

Notes: 1. The I
Parameter
Symbol
I
I
I
I
I
I
I
I
I
V
V
V
V
V
V
DC CHARACTERISTICS
LI
LO
LIT
LIA
CC1
CC2
CC3
CC4
CC5
ACC
OL
OH
IL
IH
ID
3. Automatic sleep mode enables the low power mode when address remain stable for 150 ns.
4. This timing is for Sector Protection operation.
5. Applicable for only V
2. I
CC
Input Leakage Current
Output Leakage Current
A
Current
WP/ACC Inputs Leakage Current
V
V
V
V
V
(Automatic Sleep Mode) (Note 3)
Input Low Level
Input High Level
Voltage for WP/ACC Sector
Protection/Unprotection and
Program Accelaration
Voltage for Autoselect and Sector
Protection (A
Output Low Voltage Level
Output High Voltage Level
active while Embedded Algorithm (program or erase) is in progress.
9
CC
CC
CC
CC
CC
, OE, RESET Inputs Leakage
CC
Current (Standby)
Active Current (Note 1)
Active Current (Note 2)
Current (Standby, Reset)
Current
Parameter Description
current listed includes both the DC operating current and the frequency dependent component.
9
, OE, RESET)
MBM29SL160TD
CC
(Note 4, 5)
applying.
V
V
V
A
V
WP/ACC = V
CE = V
CE = V
CE = V
V
RESET = V
V
RESET = V
V
RESET = V
V
I
I
f=10 MHz
f=5 MHz
OL
OH
IN
OUT
CC
9
CC
CC
CC
CC
IN
, OE, RESET = 11 V
= 0.1 mA, V
= –100 A
= V
= V
= V
= V
= V
= V
= V
= V
SS
CC
IL
IL
IL
CC
CC
CC
CC
CC
Test Conditions
, OE = V
, OE = V
, OE = V
SS
to V
± 0.3 V or V
Max., CE = V
Max., CE = V
Max.
Max.
Max.,
to V
CC
SS
CC
HH
-10/-12
CC
± 0.3 V
± 0.3 V
± 0.3 V
CC
CC
, V
—
—
—
—
Max.
, V
IH
IH
IH
= V
CC
,
,
CC
= V
CC
/MBM29SL160BD
SS
= V
CC
SS
Min.
CC
CC
± 0.3 V,
± 0.3 V,
0.3 V
Max.
Word
Word
Byte
Byte
Max.
0.8 x V
V
CC
Min.
–1.0
–1.0
–0.5
8.5
10
—
—
—
—
—
—
—
—
—
–0.1
CC
0.2 x V
V
Max.
CC
+1.0
+1.0
9.5
0.1
35
20
25
25
15
15
25
11
—
5
5
5
+0.3
CC
-10/-12
Unit
mA
mA
mA
mA
µA
V
V
V
V
V
V
A
A
A
A
A
31