MBM29SL160TD Fujitsu Microelectronics, Inc., MBM29SL160TD Datasheet - Page 18
MBM29SL160TD
Manufacturer Part Number
MBM29SL160TD
Description
Flash Memory 16m 2m X 8/1m X 16 Bit
Manufacturer
Fujitsu Microelectronics, Inc.
Datasheet
1.MBM29SL160TD.pdf
(61 pages)
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18
MBM29SL160TD
Notes: 1. Address bits A
2. Bus operations are defined in Tables 4 and 5.
3. RA =
4. RD =
5. SPA = Sector group address to be protected. Set sector group address (SGA) and (A
6. OTPA = Address of the OTP area
*1: This command is valid while Fast Mode.
*2: This command is valid while RESET = V
*3: The valid addresses are A
*4: This command is valid while OTP mode.
*5: The data "00H" is also acceptable.
7. The system should generate the following address patterns:
8. Both Read/Reset commands are functionally equivalent, resetting the device to the read mode.
Address (SA).
PA =
SA =
PD =
SD =
Address of the memory location to be read
Address of the memory location to be programmed
Address of the sector to be erased. The combination of A
Data read from location RA during read operation.
Data to be programmed at location PA. Data is latched on the falling edge of write pulse.
Sector group protection verify data. Output 01H at protected sector group addresses and output
Addresses are latched on the falling edge of the write pulse.
uniquely select any sector.
00H at unprotected sector group addresses.
29SL160TD (Top Boot Type)
29SL160BD (Bottom Boot Type) Word Mode: 00000H to 00080H
Word Mode: 555H or 2AAH to addresses A
Byte Mode: AAAH or 555H to addresses A
11
to A
19
-10/-12
= X = “H” or “L” for all address commands except or Program Address (PA), Sector
6
to A
/MBM29SL160BD
0
.
ID
Word Mode: FFF7FH to FFFFFH
Byte Mode: 1FFEFFH to 1FFFFFH
Byte Mode: 00000H to 00100H
.
–1
0
to A
and A
10
0
to A
19
10
, A
-10/-12
18
, A
17
, A
16
, A
15
, A
6
14
, A
, A
1
, A
13
, and A
0
) = (0, 1, 0).
12
will
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