MBM29QM12DH Fujitsu Microelectronics, Inc., MBM29QM12DH Datasheet - Page 4

• Manufacturer Part Number: MBM29QM12DH
• Description: Page Mode Flash Memory 128m 8m X 16 Bit
• Manufacturer: Fujitsu Microelectronics, Inc.

FEATURES
• 0.13 m Process Technology
• Single 3.0 V read, program and erase
• Simultaneous Read/Write operations (Dual Bank)
• FlexBank
• Enhanced V
• High Performance Page Mode
• 8 words Page (
• Compatible with JEDEC-standard commands
• Minimum 100,000 program/erase cycles
• Sector erase architecture
• Dual Boot Block
• HiddenROM region
• WP/ACC input pin
• Embedded Erase
• Embedded Program
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY)
• Automatic sleep mode
• Low V
Minimized system level power requirements
Bank A: 16 Mbit (4 KW
Bank B: 48 Mbit (32 KW
Bank C: 48 Mbit (32 KW
Bank D: 16 Mbit (4 KW
Input / Output voltage generated on the device is determined based on the V
V
20 ns maximum page access time (60 ns random access time) (3 V V
Uses same software commands as E
Eight 4K words, two hundred fifty-four 32K words, eight 8K words sectors.
Any combination of sectors can be concurrently erased. Also supports full chip erase
164K words boot block sectors, 8 at the top of the address range and 8 at the bottom of the address range
64 words for factory and 64 words for customer of HiddenROM, accessible through a new “HiddenROM Enable”
command sequence
Factory serialized and protected to provide a secure electronic serial number (ESN)
At V
protection/unprotection status
At V
At V
Automatically preprograms and erases the chip or any sector
Automatically writes and verifies data at specified address
Hardware method for detection of program or erase cycle completion
When addresses remain stable, the device automatically switches itself to low power mode.
I/O
(V
ACC
IL
IH
, allows protection of “outermost” 2 4K words on both ends of boot sectors, regardless of sector
, allows removal of boot sector protection
CCQ
CC
, increases program performance
) range : 2.7 V to 3.6 V or 1.65 V to 1.95 V
write inhibit
TM
*
I/O
1
(V
CCQ
16)
TM
) Feature
*
2
TM
Algorithms
*
2.5 V
2
8 and 32 KW
8 and 32 KW
Algorithms
96)
96)
2
PROMs
31)
31)
MBM29QM12DH
I/O
)
I/O
level
(Continued)
-60
3