MBM29PL3200BE Fujitsu Microelectronics, Inc., MBM29PL3200BE Datasheet - Page 34

• Manufacturer Part Number: MBM29PL3200BE
• Description: Page Mode Flash Memory 32 M 2 M X 16/1 M X 32 Bit
• Manufacturer: Fujitsu Microelectronics, Inc.

34
MBM29PL3200TE/BE
1. DC Characteristics
*1: The l
*2: l
*3: Automatic sleep mode enables the low power mode when address remains stable for 150 ns.
*4: (V
Input Leakage Current
(except WP, ACC)
Output Leakage Current
(except WP, ACC)
Input Leakage Current
(WP, ACC)
Output Leakage Current
(WP, ACC)
A
Current
V
V
(Program/Erase) *
V
V
(Automatic Sleep Mode) *
V
(Page Read Mode)
ACC Accelerated Program
Current
Input Low Level
Input High Level
Voltage for Program Acceleration
*
Voltage for Autoselect and Sector
Protection (A
Output Low Voltage Level
Output High Voltage Level
Low V
4
9
CC
CC
CC
CC
CC
, OE, ACC Inputs Leakage
ELECTRICAL CHARACTERISTICS
CC
Active Current (Read) *
Active Current
Current (Standby)
Current
Active Current
ID
active while Embedded Erase or Embedded Program is in progress.
CC
CC
V
Lock-Out Voltage
current listed includes both the DC operating current and the frequency dependent component.
CC
Parameter
) do not exceed 9 V.
9
, OE) *
2
4
3
1
Symbol
V
V
V
V
I
I
I
I
I
I
V
V
V
I
I
I
V
ACC
CC1
CC2
CC3
CC4
CC5
I
I
LIT
ACC
OH1
OH2
LO
LO
LKO
LI
LI
OL
IH
ID
IL
70/90
V
V
V
V
V
A
CE
f
CE
f
CE
V
V
V
CE
V
I
I
I
OL
OH
OH
IN
OUT
IN
OUT
CC
9
CC
CC
IN
CC
, OE, ACC
10 MHz
5 MHz
4.0 mA, V
V
V
V
V
V
V
V
V
V
V
V
2.0 mA, V
100 A
SS
V
SS
V
CC
IL
IL
IL
IL
CC
CC
CC
CC
, OE
, OE
, OE
, OE
SS
SS
to V
to V
Max.,
Max., CE
Max., CE
Max., ACC
to V
to V
Conditions
0.3 V or V
CC
CC
CC
CC
CC
, V
, V
12.5 V
V
V
V
V
CC
, V
, V
IH
IH
IH
IH
CC
CC
V
CC
CC
Word
Double Word
Word
Double Word
30 MHz
40 MHz
CC
V
SS
V
V
CC
V
V
SS
CC
Min.
V
CC
V
CC
V
Min.
ACC
CC
CC
0.3 V
Max.
Max.
0.3 V,
0.3 V
Max.
Max.
Max.
V
CC
Min.
11.5
11.5
2.0
2.4
2.3
1.0
1.0
2.0
2.0
0.5
0.4
Value
V
CC
Max.
12.5
12.5
0.45
0.8
2.5
35
80
80
50
50
80
12
15
20
1.0
1.0
2.0
2.0
5
5
0.3
Unit
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
A
A
A
A
A
A
A