MBM29PL3200BE Fujitsu Microelectronics, Inc., MBM29PL3200BE Datasheet - Page 10

• Manufacturer Part Number: MBM29PL3200BE
• Description: Page Mode Flash Memory 32 M 2 M X 16/1 M X 32 Bit
• Manufacturer: Fujitsu Microelectronics, Inc.

10
MBM29PL3200TE/BE
(Continued)
DW : Double Word
W : Word
*1: This command is valid while Fast Mode.
*2: The valid addresses are A
*3: This command is valid while Hi-ROM mode.
*4: The data “00h” is also acceptable.
Notes : 1.Address bits A
2.Bus operations are defined in Tables 2 and 3.
3.RA
4.RD
5.HRA
6.The system should generate the following address patterns :
7.Both Read/Reset commands are functionally equivalent, resetting the device to the read mode.
Sector Address (SA).
SA
PA
PD
Address of the memory location to be programmed
Address of the sector to be erased. The combination of A
Addresses are latched on the falling edge of the write pulse.
will uniquely select any sector.
Address of the memory location to be read
Data to be programmed at location PA. Data is latched on the falling edge of write pulse.
Data read from location RA during read operation.
DW (Double Word) Mode : 555h or 2AAh to addresses A
W (Word) Mode : AAAh or 555h to addresses A
Address of the Hi-ROM area Word Mode : 000000h to 000100h
19
to A
6
11
to A
X
0
.
“H” or “L” for all address commands except or Program Address (PA), and
70/90
Double Word Mode : 000000h to 000080h
10
to A
0
, and A-
19
10
, A
to A
18
, A
1
0
17
, A
16
, A
15
, A
14
, A
13
and A
12