MBM29LV320TE80TN Meet Spansion Inc., MBM29LV320TE80TN Datasheet - Page 31

• Manufacturer Part Number: MBM29LV320TE80TN
• Description: Flash Memory Cmos 32 M 4 M ? 8/2 M ? 16 Bit
• Manufacturer: Meet Spansion Inc.

6.
7.
(1) Fast Mode
a sector or sectors the remaining unselected sectors are not affected. The system is not required to provide any
controls or timings during these operations.
The system can determine the status of the erase operation by using DQ
RY/BY.
The sector erase begins after the “t
last sector erase command pulse and terminates when the data on DQ
at which the device return to the read mode. Data polling and Toggle Bit must be performed at an address within
any of the sectors being erased.
Multiple Sector Erase Time; [Sector Erase Time + Sector Program Time (Preprogramming)] × Number of Sector
Erase
“2. Embedded Erase
command strings and bus operations.
The Erase Suspend command allows the user to interrupt a Sector Erase operation and then perform data reads
from or programs to a sector not being erased. This command is applicable ONLY during the Sector Erase
operation which includes the time-out period for sector erase. The Erase Suspend command will be ignored if
written during the Chip Erase operation or Embedded Program Algorithm. Writing the Erase Suspend command
(B0h) during the Sector Erase time-out results in immediate termination of the time-out period and suspension
of the erase operation.
Writing the Erase Resume command (30h) resumes the erase operation. The addresses are “DON’T CARES”
when writing the Erase Suspend or Erase Resume command.
When the Erase Suspend command is written during the Sector Erase operation, the device will take a maximum
of “t
RY/BY output pin is at high impedance state and the DQ
must use the address of the erasing sector for reading DQ
suspended. Further writes of the Erase Suspend command are ignored.
When the erase operation is suspended, the device defaults to the erase-suspend-read mode. Reading data in
this mode is the same as reading from the standard read mode except that the data must be read from sectors
that have not been erase-suspended. Successively reading from the erase-suspended sector while the device
is in the erase-suspend-read mode will cause DQ
After entering the erase-suspend-read mode, the users can program the device by writing the appropriate
command sequence for Program. This program mode is known as the erase-suspend-program mode. Again,
programming in this mode is the same as programming in the regular Program mode except that the data must
be programmed to sectors that are not erase-suspended. Successively reading from the erase-suspended sector
while the device is in the erase-suspend-program mode causes DQ
Program operation is detected by the RY/BY output pin, Data polling of DQ
is the same as the regular Program operation. Note that DQ
can be read from any address.
To resume the operation of Sector Erase, the Resume command (30h) should be written. Any further writes of
the Resume command at this point is ignored. Another Erase Suspend command is written after the chip
resumeds erasing.
Fast Mode function. This mode dispenses with the initial two unclock cycles required in the standard program
command sequence by writing Fast Mode command into the command register. In this mode the required bus
cycle for programming is two cycles instead of four bus cycles in standard program command. The read operation
is also executed after exiting this mode. During the Fast mode, do not write any command other than the Fast
program/Fast mode reset command. To exit this mode, it is necessary to write Fast Mode Reset command into
the command register. (See “8. Embedded Program
active current is required even CE = V
Erase Suspend/Resume
Extended Command
SPD
” to suspend the erase operation. When the device has entered the erase-suspended mode, the
TM
Algorithm” in ■FLOW CHART illustrates the Embedded Erase
TOW
Retired Product DS05-20894-5E_July 31, 2007
IH
” time out from the rising edge of CE or WE whichever starts first for the
during Fast Mode.
2
to toggle. See “17. DQ
TM
MBM29LV320TE/BE
Algorithm for Fast Mode” in ■FLOW CHART.) The V
7
bit is at logic “1”, and DQ
7
must be read from the Program address while DQ
6
and DQ
2
to toggle. The end of the erase-suspended
7
7
is “1” (See “12. Write Operation Status”.)
to determine if the erase operation is
2
7
”.
7
(Data Polling), DQ
or by the Toggle Bit I (DQ
6
TM
stops toggling. The user
Algorithm using typical
6
(Toggle Bit), or
80/90/10
6
) which
CC
6
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