MBM29LV320TE80TN Meet Spansion Inc., MBM29LV320TE80TN Datasheet - Page 29

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MBM29LV320TE80TN

Manufacturer Part Number
MBM29LV320TE80TN
Description
Flash Memory Cmos 32 M 4 M ? 8/2 M ? 16 Bit
Manufacturer
Meet Spansion Inc.
Datasheet
■ COMMAND DEFINITIONS
1.
2.
3.
The device operations are selected by writing specific address and data sequences into the command register.
Writing incorrect address and data values or writing them in the improper sequence will reset the device to the
read mode. “MBM29LV320TE/BE Command Definitions Table” in ■DEVICE BUS OPERATIONS defines the
valid register command sequences. Note that the Erase Suspend (B0h) and Erase Resume (30h) commands
are valid only while the Sector Erase operation is in progress. Moreover both Read/Reset commands are
functionally equivalent, resetting the device to the read mode. Please note that commands are always written
at DQ
In order to return from Autoselect mode or Exceeded Timing Limits (DQ
Reset operation is initiated by writing the Read/Reset command sequence into the command register. Micro-
processor read cycles retrieve array data from the memory. The device remain enabled for reads until the
command register contents are altered.
The device automatically powers up in the Read/Reset state. In this case, a command sequence is not required
to read data. Standard microprocessor read cycles retrieves array data. This default value ensures that no
spurious alteration of the memory content occurs during the power transition. See “■AC CHARACTERISTICS”
for the specific timing parameters.
Flash memories are intended for use in applications where the local CPU alters memory contents. As such,
manufacture and device codes must be accessible while the device resides in the target system. PROM pro-
grammers typically access the signature codes by raising A
onto the address lines is not generally desired system design practice.
The device contains Autoselect command operation to supplement traditional PROM programming methodology.
The operation is initiated by writing the Autoselect command sequence into the command register.
Following the command write, a read cycle from address (XX) 00h retrieves the manufacture code of 04h. A
read cycle from address (XX) 01h for ×16 ((XX) 02h for ×8) returns the device code. A read cycle from address
(XX) 03h for ×16 ((XX) 06h for ×8) returns the extended device code. (See “MBM29LV320TE/BE Sector Group
Protection Verify Autoselect Codes Table” and “Extended Autoselect Code Table” in ■DEVICE BUS OPERA-
TIONS.)
The sector state (protection or unprotection) is informed by address (XX) 02h for ×16 ((XX) 04h for ×8). Scanning
the sector group addresses (A
a logic “1” at device output DQ
by verify sector group protection on the protected sector. (See “MBM29LV320TE/BE User Bus Operations Tables
(BYTE = V
To terminate the operation, it is necessary to write the Read/Reset command sequence into the register. To
execute the Autoselect command during the operation, writing Read/Reset command sequence must precede
the Autoselect command.
The device is programmed on a byte-by-byte (or word-by-word) basis. Programming is a four bus cycle operation.
There are two “unlock” write cycles. These are followed by the program set-up command and data write cycles.
Addresses are latched on the falling edge of CE or WE, whichever happens later and the data is latched on the
rising edge of CE or WE, whichever happens first. The rising edge of CE or WE (whichever happens first) begins
programming. Upon executing the Embedded Program Algorithm command sequence, the system is not required
to provide further controls or timings. The device automatically provides adequate internally generated program
pulses and verify programmed cell margin.
The system can determine the status of the program operation by using DQ
or RY/BY. The Data Polling and Toggle Bit must be performed at the memory location being programmed.
Read/Reset Command
Autoselect Command
Byte/Word Programming
7
to DQ
IH
and BYTE = V
0
and DQ
15
to DQ
IL
)” in ■DEVICE BUS OPERATIONS.)
20
0
8
for a protected sector group. The programming verification should be performed
, A
bits are ignored.
19
, A
Retired Product DS05-20894-5E_July 31, 2007
18
, A
17
, A
16
, A
15
, A
MBM29LV320TE/BE
14
, A
9
13
to a high voltage. However multiplexing high voltage
, and A
12
) while (A
5
= 1) to Read/Reset mode, the Read/
7
(Data Polling), DQ
6
, A
1
, A
0
) = (0, 1, 0) will produce
6
(Toggle Bit),
80/90/10
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