MBM29DL161TE-70TN Meet Spansion Inc., MBM29DL161TE-70TN Datasheet
MBM29DL161TE-70TN
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MBM29DL161TE-70TN Summary of contents
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MBM29DL16XTE/BE Data Sheet (Retired Product) This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications There is no change to this data sheet ...
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This page left intentionally blank MBM29DL16XTE/BE_DS05-20880-5E July 13, 2007 ...
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SPANSION Flash Memory TM Data Sheet September 2003 This document specifies SPANSION Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and ...
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FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT MBM29DL16XTE/BE ■ FEATURES • 0.23 μm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to “MBM29DL16XTE/BE Device Bank ...
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Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP(1) (Package suffix: TN – Normal Bend Type, ...
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MBM29DL16XTE/BE ■ GENERAL DESCRIPTION The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTE/BE are offered in a 48-pin TSOP(1) and 48-pin FBGA Package. ...
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... MBM29DL16XTE/BE Device Bank Divisions Table Device Organization Part Number MBM29DL161TE/BE MBM29DL162TE/BE × 8/× 16 MBM29DL163TE/BE MBM29DL164TE/BE MBM29DL16XTE/BE Bank 1 Megabits Sector Sizes 0.5 Mbit Eight 8K byte/4K word Eight 8K byte/4K word, 2 Mbit three 64K byte/32K word Eight 8K byte/4K word, 4 Mbit seven 64K byte/32K word Eight 8K byte/4K word, ...
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MBM29DL16XTE/BE ■ PIN ASSIGNMENTS N. RESET 12 N.C. 13 WP/ACC ...
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RY/BY WP/ACC A ■ PIN DESCRIPTIONS Pin Name Function Address Input Data Input/Output Chip Enable OE Output Enable WE Write Enable Hardware Reset Pin/ RESET ...
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MBM29DL16XTE/BE ■ BLOCK DIAGRAM RESET State WE Control CE & OE Command BYTE Register WP/ACC ■ LOGIC SYMBOL 10 70/90 Cell Matrix Bank ...
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DEVICE BUS OPERATION MBM29DL16XTE/BE User Bus Operations Table (BYTE = V Operation Auto-Select Manufacturer Code Auto-Select Device Code* Read* 3 Standby Output Disable Write (Program/Erase Enable Sector Group Protection Verify Sector Group ...
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MBM29DL16XTE/BE MBM29DL16XTE/BE Command Definitions Table First Bus Bus Command Write Write Cycle Sequence Cycles Req’d Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Word 1 XXXh Read/Reset* 1 Byte 555h Word 3 Read/Reset* 1 AAAh Byte ...
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Notes: • Address bits “H” or “L” for all address commands except or Program Address (PA), Sector 19 11 Address (SA), and Bank Address (BA). • Bus operations are defined in “MBM29DL16XTE/BE User Bus ...
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... MBM29DL16XTE/BE MBM29DL161TE/BE Sector Group Protection Verify Autoselect Codes Table Type Byte Manufacture’s Code Word Byte MBM29DL161TE Word Device Code Byte MBM29DL161BE Word Byte Sector Group Sector Group Protection Word * for Byte mode. At Byte mode *2: Outputs 01h at protected sector group addresses and outputs 00h at unprotected sector group addresses. ...
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MBM29DL162TE/BE Sector Group Protection Verify Autoselect Codes Table Type Byte Manufacture’s Code Word Byte MBM29DL162TE Word Device Code Byte MBM29DL162BE Word Byte Sector Group Sector Group Protection Word * for Byte mode. At Byte mode ...
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MBM29DL16XTE/BE MBM29DL163TE/BE Sector Group Protection Verify Autoselect Codes Table Type Byte Manufacture’s Code Word Byte MBM29DL163TE Word Device Code Byte MBM29DL163BE Word Byte Sector Group Sector Group Protection Word * for Byte mode. At Byte mode, DQ ...
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MBM29DL164TE/BE Sector Group Protection Verify Autoselect Codes Table Type Byte Manufacture’s Code Word Byte MBM29DL164TE Word Device Code Byte MBM29DL164BE Word Byte Sector Group Sector Group Protection Word * for Byte mode. At Byte mode ...
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... SA36 SA37 SA38 Note: The address range The address range 70/90 Sector Address Table (MBM29DL161TE) Sector Size (Kbytes/ Address Range ) Kwords 64/32 000000h to 00FFFFh 64/32 ...
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Sector Address Table (MBM29DL161BE) Sector Address Bank Sector Bank Address SA38 SA37 SA36 SA35 SA34 ...
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MBM29DL16XTE/BE Sector Address Bank Sector Bank Address SA0 SA1 SA2 SA3 SA4 SA5 ...
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Sector Address Table (MBM29DL162BE) Sector Address Bank Sector Bank Address SA38 SA37 SA36 SA35 SA34 ...
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MBM29DL16XTE/BE Sector Address Bank Sector Bank Address SA0 SA1 SA2 SA3 SA4 SA5 ...
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Sector Address Table (MBM29DL163BE) Sector Address Bank Sector Bank Address SA38 SA37 SA36 SA35 SA34 ...
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MBM29DL16XTE/BE Sector Address Bank Sector Bank Address SA0 SA1 SA2 SA3 SA4 SA5 ...
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Sector Address Table (MBM29DL164BE) Sector Address Bank Sector Bank Address SA38 SA37 SA36 SA35 SA34 ...
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MBM29DL16XTE/BE Sector Group Addresses Table (MBM29DL16XTE) Sector Group SGA0 SGA1 SGA2 0 0 SGA3 0 1 SGA4 0 1 SGA5 1 0 SGA6 1 0 SGA7 1 1 ...
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Sector Group Addresses Table (MBM29DL16XBE) Sector Group SGA0 0 0 SGA1 0 0 SGA2 0 0 SGA3 0 0 SGA4 0 0 SGA5 0 0 SGA6 0 0 SGA7 SGA8 0 0 ...
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... Sector Temporary Unprotection 1Fh 0004h 01h = Supported Sector Protection 20h 0000h Algorithm Number of Sector for Bank 2 21h 000Ah 00h = Not Supported 1Fh = MBM29DL161TE 22h 0000h 1Ch = MBM29DL162TE 18h = MBM29DL163TE 10h = MBM29DL164TE 23h 0005h 1Fh = MBM29DL161BE 1Ch = MBM29DL162BE 24h 0000h 18h = MBM29DL163BE ...
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... The bank selection can be selected by bank address (A The MBM29DL161TE/BE have two banks which contain Bank 1 (8KB × 8 sectors) and Bank 2 (64KB × 31 sectors). The MBM29DL162TE/BE have two banks which contain Bank 1 (8KB × ...
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... IL identifier code (MBM29DL161TE = 36h and MBM29DL161BE = 39h for ×8 mode; MBM29DL161TE = 2236h and MBM29DL161BE = 2239h for ×16 mode), (MBM29DL162TE = 2Dh and MBM29DL162BE = 2Eh for ×8 mode; MBM29DL162TE = 222Dh and MBM29DL162BE = 222Eh for ×16 mode), (MBM29DL163TE = 28h and MBM29DL163BE = 2Bh for × ...
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... and A ) should be set to the sector to be protected. “Sector Address Tables (MBM29DL161TE/BE, 12 MBM29DL162TE/BE, MBM29DL163TE/BE, MBM29DL164TE/BE)” in ■FLEXIBLE SECTOR-ERASE ARCHITECTURE define the sector address for each of the thirty nine (39) individual sectors, and “Sector Group Addresses Tables (MBM29DL16XTE/BE)” in ■FLEXIBLE SECTOR-ERASE ARCHITECTURE define the sector group address for each of the seventeen (17) individual group sectors ...
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MBM29DL16XTE/BE group. See “MBM29DL16XTE/BE Sector Group Protection Verify Autoselect Codes Tables” and “Expanded Autoselect Code Tables” in ■DEVICE BUS OPERATION for Autoselect codes. • Temporary Sector Group Unprotection This feature allows temporary unprotection of previously protected sector groups of the ...
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Accelerated Program Operation MBM29DL16XTE/BE offer accelerated program operation which enables the programming in high speed. If the system asserts V to the WP/ACC pin, the device automatically enters the acceleration mode and the time ACC required for program operation ...
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... Following the command write, a read cycle from address (BA)00h retrieves the manufacture code of 04h. A read cycle from address (BA)01h for ×16((BA)02h for ×8) returns the device code (MBM29DL161TE = 36h and MBM29DL161BE = 39h for ×8 mode; MBM29DL161TE = 2236h and MBM29DL161BE = 2239h for ×16 mode), (MBM29DL162TE = 2Dh and MBM29DL162BE = 2Eh for ×8 mode; MBM29DL162TE = 222Dh and MBM29DL162BE = 222Eh for × ...
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The manufacture and device codes can be allowed reading from selected bank. To read the manufacture and device codes and sector group protection status from non-selected bank necessary to write Read/Reset command sequence into the register and then ...
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MBM29DL16XTE/BE After the Program Resume command (30h) is written, the device reverts to programming. The bank addresses of sector being suspended should be set when writing the Program Resume command. The system can determine the status of the program operation ...
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In that case, restart the erase on those sectors and allow them to complete. (Refer to the Write Operation Status section for Sector Erase Timer operation.) Loading the sector erase buffer may be done in any sequence and with any ...
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MBM29DL16XTE/BE To resume the operation of Sector Erase, the Resume command (30h) should be written to the bank being erase suspended. Any further writes of the Resume command at this point will be ignored. Another Erase Suspend command can be ...
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... HiddenROM mode. The bank address of the HiddenROM should be set on the third cycle of this reset command sequence. In case of MBM29DL161TE/BE, whose Bank 1 size is 0.5 Mbit, the simultaneous operation cannot execute multi-function mode between the HiddenROM area and Bank 2 Region. • HiddenROM Program Command To program the data to the HiddenROM area, write the HiddenROM program command sequence during HiddenROM mode ...
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MBM29DL16XTE/BE • HiddenROM Protect Command There are two methods to protect the HiddenROM area. One is to write the sector group protect setup command (60h), set the sector address in the HiddenROM area and (A protect command (60h) during the ...
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Status Embedded Program Algorithm Embedded Erase Algorithm Erase Suspend Read (Erase Suspended Sector) Erase Erase Suspend Read Suspended (Non-Erase Suspended Sector) In Progress Mode Erase Suspend Program (Non-Erase Suspended Sector) Program Suspend Read Program (Program Suspended Sector) Suspended Program Suspend ...
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MBM29DL16XTE/BE driving status information on DQ Depending on when the system samples the DQ has completed the Embedded Algorithm operation and DQ may be still invalid. The valid data on DQ The Data Polling feature is only active during the ...
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DQ bit will indicate a “1.” Please note that this is not a device failure condition since the devices were incorrectly 5 used. If this occurs, reset the device with command sequence. • Sector Erase Timer After the ...
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MBM29DL16XTE/BE operation still toggling, the device did not complete the operation successfully, and the system must write the reset command to return to reading array data. The remaining scenario is that the system initially determines that the ...
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Low V Write Inhibit CC To avoid initiation of a write cycle during V than V (Min < the command register is disabled and all internal program/erase circuits are LKO CC LKO disabled. Under this ...
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MBM29DL16XTE/BE ■ ABSOLUTE MAXIMUM RATINGS Parameter Storage Temperature Ambient Temperature with Power Applied Voltage with Respect to Ground All Pins except A , OE, RESET * Power Supply Voltage * OE, and RESET ...
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MAXIMUM OVERSHOOT/MAXIMUM UNDERSHOOT +0.6 V –0.5 V – +2.0 V +14.0 V +13 +0 Note: This waveform is applied for A MBM29DL16XTE/ ...
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MBM29DL16XTE/BE ■ ELECTRICAL CHARACTERISTICS 1. DC Characteristics Parameter Input Leakage Current Output Leakage Current A , OE, RESET Inputs Leakage 9 Current WP/ACC Accelerated Program Current V Active Current * Active Current * Current ...
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The I current listed includes both the DC operating current and the frequency dependent component active while Embedded Algorithm (program or erase progress This timing is only for ...
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MBM29DL16XTE/ Characteristics • Read Only Operations Characteristics Parameter Read Cycle Time Address to Output Delay Chip Enable to Output Delay Output Enable to Output Delay Chip Enable to Output High-Z Output Enable to Output High-Z Output Hold Time ...
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Write/Erase/Program Operations Parameter Write Cycle Time Address Setup Time Address Setup Time to OE Low During Toggle Bit Polling Address Hold Time Address Hold Time from High During Toggle Bit Polling Data Setup Time Data Hold ...
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MBM29DL16XTE/BE (Continued) Parameter RESET Pulse Width RESET High Level Period Before Read BYTE Switching Low to Output High-Z BYTE Switching High to Output Active Program/Erase Valid to RY/BY Delay Delay Time from Embedded Output Enable Erase Time-out Time Erase Suspend ...
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PIN CAPACITANCE 1. TSOP(1) pin capacitance Parameter Input Capacitance Output Capacitance Control Pin Capacitance WP/ACC Pin Capacitance Notes : • Test conditions T = +25° 1.0 MHz A • pin capacitance is stipulated by output ...
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MBM29DL16XTE/BE ■ TIMING DIAGRAM • Key to Switching Waveforms (1) AC Waveforms for Read Operations Address Outputs 54 70/90 WAVEFORM INPUTS OUTPUTS Must Be Will Be Steady Steady May Will Be Change Changing from ...
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AC Waveforms for Hardware Reset/Read Operations Address RESET High-Z Outputs (3) AC Waveforms for Alternate WE Controlled Program Operations 3rd Bus Cycle Address 555h GHWL ...
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MBM29DL16XTE/BE (4) AC Waveforms for Alternate CE Controlled Program Operations Address Data Notes : • address of the memory location to be programmed. • data to be programmed at byte address. • DQ ...
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AC Waveforms for Chip/Sector Erase Operations Address 555h GHWL WE t Data t VCS the sector address for Sector Erase. Addresses = 555h (Word) for ...
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MBM29DL16XTE/BE (6) AC Waveforms for Data Polling during Embedded Algorithm Operations Data Data BUSY RY/ Valid Data (The device has completed the Embedded operation). ...
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AC Waveforms for Toggle Bit I during Embedded Algorithm Operations Address OEH /DQ Data BUSY RY/ stops toggling (The device has completed the Embedded operation). 6 ...
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MBM29DL16XTE/BE (8) Bank-to-bank Read/Write Timing Diagram Read t RC Address BA1 Output Note: This is the example of Read for Bank 1 and Embedded Algorithm (program) for Bank 2. BA1: Address corresponding to Bank 1. BA2: ...
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RY/BY Timing Diagram during Program/Erase Operations CE WE RY/BY (11) RESET, RY/BY Timing Diagram WE RESET RY/BY (12) Timing Diagram for Word Mode Configuration CE BYTE ELFH MBM29DL16XTE/BE Rising ...
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MBM29DL16XTE/BE (13) Timing Diagram for Byte Mode Configuration CE BYTE t ELFL (14) BYTE Timing Diagram for Write Operations BYTE 62 70/90 Data Output Data Output (DQ to ...
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AC Waveforms for Sector Group Protection SPAX ...
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MBM29DL16XTE/BE (16) Temporary Sector Group Unprotection Timing Diagram VIDR t VCS RESET CE WE RY/BY 64 70/90 t Program or Erase Command Sequence VLHT Unprotection period Retired Product DS05-20880-5E_July 13, 2007 t VLHT t ...
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Extended Sector Group Protection Timing Diagram VCS RESET VLHT t t VIDR WC Address Data 60h SPAX : Sector Group Address ...
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MBM29DL16XTE/BE (18) Accelerated Program Timing Diagram VACCR t VCS V ACC V IH WP/ACC CE WE RY/BY 66 70/90 t Program Command Sequence VLHT Acceleration period Retired Product DS05-20880-5E_July 13, 2007 t VLHT t VLHT ...
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FLOW CHART (1) Embedded Program TM Algorithm EMBEDDED ALGORITHMS Increment Address Notes : • The sequence is applied for × 16 mode. • The addresses differ from × 8 mode. MBM29DL16XTE/BE Start Write Program Command Sequence (See below) Data ...
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MBM29DL16XTE/BE (2) Embedded Erase TM Algorithm EMBEDDED ALGORITHMS Chip Erase Command Sequence (Address/Command): 555h/AAh 2AAh/55h 555h/AAh 2AAh/55h Notes : • The sequence is applied for × 16 mode. • The addresses differ from × 8 mode. 68 70/90 Start Write ...
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Data Polling Algorithm rechecked even MBM29DL16XTE/BE Start VA = Address for programming = Any of the sector addresses within Read Byte ( the sector being erased ...
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MBM29DL16XTE/BE (4) Toggle Bit Algorithm *1 : Read toggle bit twice to determine whether it is toggling Recheck toggle bit because it may stop toggling 70/90 Start VA = Bank address being executed *1 Read ...
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Sector Group Protection Algorithm Increment PLSCNT PLSCNT = 25? Remove V Write Reset Command Device Failed * : byte mode MBM29DL16XTE/BE Start Setup Sector Group Addr ...
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MBM29DL16XTE/BE (6) Temporary Sector Group Unprotection Algorithm *1 : All protected sector groups are unprotected All previously protected sector groups are protected once again. 72 70/90 Start 1 RESET = Perform Erase or Program Operations ...
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Extended Sector Group Protection Algorithm Device is Operating in Temporary Sector Group Unprotection Mode Increment PLSCNT No PLSCNT = 25? Yes Remove V from RESET ID Write Reset Command Device Failed MBM29DL16XTE/BE Start RESET = V ID Wait to ...
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MBM29DL16XTE/BE (8) Embedded Program TM Algorithm for Fast Mode FAST MODE ALGORITHM Increment Address Notes: • The sequence is applied for × 16 mode. • The addresses differ from × 8 mode. 74 70/90 Start 555h/AAh 2AAh/55h 555h/20h XXXh/A0h Program ...
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... ORDERING INFORMATION Part No. MBM29DL161TE-70TN MBM29DL161TE-90TN MBM29DL162TE-70TN MBM29DL162TE-90TN MBM29DL163TE-70TN MBM29DL163TE-90TN MBM29DL164TE-70TN MBM29DL164TE-90TN MBM29DL161TE-70TR MBM29DL161TE-90TR MBM29DL162TE-70TR MBM29DL162TE-90TR MBM29DL163TE-70TR MBM29DL163TE-90TR MBM29DL164TE-70TR MBM29DL164TE-90TR MBM29DL161TE-70PBT MBM29DL161TE-90PBT MBM29DL162TE-70PBT MBM29DL162TE-90PBT MBM29DL163TE-70PBT MBM29DL163TE-90PBT MBM29DL164TE-70PBT MBM29DL164TE-90PBT MBM29DL161BE-70TN MBM29DL161BE-90TN MBM29DL162BE-70TN MBM29DL162BE-90TN MBM29DL163BE-70TN MBM29DL163BE-90TN MBM29DL164BE-70TN MBM29DL164BE-90TN MBM29DL161BE-70TR MBM29DL161BE-90TR MBM29DL162BE-70TR MBM29DL162BE-90TR MBM29DL163BE-70TR ...
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MBM29DL16XTE/BE MBM29DL16X T E DEVICE NUMBER/DESCRIPTION MBM29DL16X 16 Mega-bit (2 M × 8-Bit × 16-Bit) CMOS Flash Memory 3.0 V-only Read, Program, and Erase 76 70/ PACKAGE TYPE TN = 48-Pin Thin Small Outline Package ...
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PACKAGE DIMENSIONS 48-pin plastic TSOP(1) (FPT-48P-M19) LEAD No. 1 INDEX 24 20.00 (.787 * 18.40 (.724 "A" 0.10(.004) 2003 FUJITSU LIMITED F48029S-c-6-7 C 48-pin plastic TSOP(1) (FPT-48P-M20) LEAD No. 1 INDEX 24 0.10(.004) "A" * 18.40 (.724 20.00 (.787 ...
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MBM29DL16XTE/BE (Continued) 48-pin plastic FBGA (BGA-48P-M11) 8.00±0.20(.315±.008) INDEX C0.25(.010) 0.10(.004) 2001 FUJITSU LIMITED B48011S-c-5 70/90 +0.15 +.006 1.05 .041 – 0.10 – .004 (Mounting height) 0.38±0.10(.015±.004) (Stand off) 6.00±0.20 (4.00(.157)) (.236±.008) H Dimensions in mm (inches). Note : ...
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Revision History Revision DS05-20880-5E（July 13, 2007） The following comment is added. This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. MBM29DL16XTE/BE Retired Product DS05-20880-5E_July 13, 2007 ...
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MBM29DL16XTE/BE FUJITSU LIMITED For further information please contact: Japan FUJITSU LIMITED Marketing Division Electronic Devices Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0721, Japan Tel: +81-3-5322-3353 Fax: +81-3-5322-3386 http://edevice.fujitsu.com/ North and South America FUJITSU MICROELECTRONICS AMERICA, INC. 1250 ...