MT3S111 TOSHIBA Semiconductor CORPORATION, MT3S111 Datasheet - Page 4

• Manufacturer Part Number: MT3S111
• Description: Toshiba Transistor Silicon-germanium Npn Epitaxial Planar Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

800
700
600
500
400
300
200
100
0
2.4
1.6
1.2
0.8
0.4
0
2
0
0.1
Collector-base voltage V
Cob
Cre
25
Ambient temperature T
The device is mounted on a ceramic-
board(25.4mm×25.4mm×0.8mm(t))
Device only
C
50
re
,C
ob
P
C
-V
75
-T
CB
a
1
100
CB
a
(V)
(
°C
125
)
IE=0
f=1MHz
Ta=25°C
150
10
4
40
35
30
25
20
15
10
5
0
1
VCE=5V
f1=500MHz
f2=501MHz
Pin=-15dBmW
Ta=25°C
Collector-current I
OIP
3
-I
C
10
C
(mA)
2009-03-30
MT3S111
100