MT3S111 TOSHIBA Semiconductor CORPORATION, MT3S111 Datasheet - Page 2

• Manufacturer Part Number: MT3S111
• Description: Toshiba Transistor Silicon-germanium Npn Epitaxial Planar Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Microwave Characteristics (Ta = 25°C)
Electrical Characteristics (Ta = 25°C)
Caution:
Transition frequency
Insertion gain
Noise figure
3
intercept point
Collector cut-off current
DC current gain
Output capacitance
Reverse transfer capacitance
Note 2: C
This device is sensitive to electrostatic discharge due to the high frequency transistor process of
f
Please make tool and equipment earthed enough when you handle.
T
rd
=60 GHz class which is used for this product.
order intermodulation distortion output
re
Characteristics
Characteristics
is measured using a 3-terminal method with capacitance bridge
|S
|S
Symbol
Symbol
NF(1)
NF(2)
21e
21e
OIP
I
CBO
h
C
C
f
FE
T
ob
re
|
|
2
2
3
(1)
(2)
V
V
V
V
V
V
⊿f=1 MHz
V
V
V
V
CE
CE
CE
CE
CE
CE
CB
CE
CB
CB
=5 V, I
=5 V, I
=5 V, I
=5 V, I
=5 V, I
=5 V, I
=5 V, I
=5 V, I
=5 V, I
=5 V, I
2
Test Condition
Test Condition
C
C
C
C
C
C
E
C
E
E
=0 A
=0 A, f=1 MHz
=0 A, f=1 MHz (Note 2)
=30 mA
=30 mA, f=500 MHz
=30 mA, f=1 GHz
=30 mA, f=500 MHz
=30 mA, f=1 GHz
=30 mA, f=500 MHz,
=50 mA
200
Min
Min
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
9
Typ.
11.5
17.5
0.65
Typ.
1.45
0.9
0.9
12
32
⎯
⎯
Max
Max
400
1.2
0.1
1.2
⎯
⎯
⎯
⎯
⎯
⎯
2009-03-30
MT3S111
dBmW
GHz
Unit
Unit
dB
dB
dB
dB
μA
pF
pF
⎯