MT3S111 TOSHIBA Semiconductor CORPORATION, MT3S111 Datasheet - Page 3

• Manufacturer Part Number: MT3S111
• Description: Toshiba Transistor Silicon-germanium Npn Epitaxial Planar Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
70
60
50
40
30
20
10
20
18
16
14
12
10
100
0
8
6
4
2
0
10
0
1
COMMON EMITTER
Ta=25°C
VCE=5V
Ta=25°C
1
COMMON EMITTER
VCE=5V
Ta=25°C
Collector-emitter voltage V
1
Collector-current I
Collector-current I
2
I
|S
C
h
-V
21e
FE
10
CE
3
10
-I
|
2
C
-I
C
C
C
f = 1GHz
(mA)
(mA)
4
f = 500MHz
CE
IB=
(V)
5
160μA
120μA
200μA
80μA
40μA
100
100
6
3
0.001
15
10
2.5
2.0
1.5
1.0
0.5
0.0
0.01
5
0
100
0.1
10
1
1
VCE=5V
Ta=25°C
1
0
f = 500MHz
COMMON EMITTER
VCE=5V
Ta=25°C
Base-emitter voltage V
f = 1GHz
Collector-current I
Collector-current I
0.2
0.4
I
NF-I
10
C
10
f
T
-V
-I
BE
C
C
0.6
C
C
(mA)
(mA)
BE
VCE=5V
Ta=25°C
0.8
(V)
2009-03-30
MT3S111
100
100
1