NP36P04SDG Renesas Electronics Corporation., NP36P04SDG Datasheet - Page 6

• Manufacturer Part Number: NP36P04SDG
• Description: Switching P-channel Power Mosfet
• Manufacturer: Renesas Electronics Corporation.

PACKAGE DRAWING (Unit: mm)
TO-252 (MP-3ZK)
EQUIVALENT CIRCUIT
Gate
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
6
1.14 MAX.
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
4
1
Source
2.3
Drain
5.1 TYP.
4.3 MIN.
6.5±0.2
2
2.3
Body
Diode
3
0.76±0.12
1. Gate
2. Drain
3. Source
4. Fin (Drain)
No Plating
2.3±0.1
1.0
0.5±0.1
0 to 0.25
No Plating
0.5±0.1
Data Sheet D19074EJ2V0DS
NP36P04SDG