NP36P04SDG Renesas Electronics Corporation., NP36P04SDG Datasheet - Page 5

• Manufacturer Part Number: NP36P04SDG
• Description: Switching P-channel Power Mosfet
• Manufacturer: Renesas Electronics Corporation.

1000
-0.01
-100
100
-0.1
-10
10
40
30
20
10
-1
1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
0
-0.1
-75
0
V
V
R
DD
GS
G
V
V
SWITCHING CHARACTERISTICS
= 0 Ω
-25
F(S-D)
= −20 V
= −10 V
GS
T
ch
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
= −10 V
- Channel Temperature - °C
- Source to Drain Voltage - V
I
D
0.5
25
-1
- Drain Current - A
t
t
d(off)
f
V
GS
75
= −4.5 V
0 V
−10 V
t
t
r
d(on)
125
-10
1
I
Pulsed
D
= −18 A
175
Pulsed
Data Sheet D19074EJ2V0DS
-100
225
1.5
10000
1000
1000
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100
100
-40
-30
-20
-10
10
10
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
0
1
-0.1
-0.1
0
di/dt = −100 A/μs
V
V
f = 1 MHz
GS
GS
V
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
= 0 V
= 0 V
10
DS
I
F
- Diode Forward Current - A
V
- Drain to Source Voltage - V
Q
DD
G
20
-1
-1
= −32 V
- Gate Charge - nC
V
−20 V
DS
−8 V
30
V
GS
NP36P04SDG
-10
-10
40
I
C
D
C
C
iss
oss
rss
= −36 A
50
-100
-100
60
-12
-9
-6
-3
0
5