NP36P04SDG Renesas Electronics Corporation., NP36P04SDG Datasheet - Page 4

• Manufacturer Part Number: NP36P04SDG
• Description: Switching P-channel Power Mosfet
• Manufacturer: Renesas Electronics Corporation.

4
-120
-100
-2.5
-1.5
-0.5
-80
-60
-40
-20
40
30
20
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
-3
-2
-1
0
0
0
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
-75
-1
0
V
GS
V
GS
V
-25
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
= −10 V
T
DS
= −4.5 V
-1
ch
- Drain to Source Voltage - V
- Channel Temperature - °C
−10 V
I
D
-10
- Drain Current - A
25
-2
−4.5 V
75
-3
-100
125
V
I
D
DS
= −250 μA
= V
Pulsed
-4
175
Pulsed
GS
Data Sheet D19074EJ2V0DS
-1000
225
-5
-0.001
-1000
-0.01
-100
-0.1
100
-10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0.1
40
30
20
10
10
-1
0
1
-0.1
FORWARD TRANSFER CHARACTERISTICS
0
0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
Pulsed
V
Pulsed
DS
DS
= −10 V
= −10 V
V
V
GS
-1
T
GS
ch
- Gate to Source Voltage - V
-5
- Gate to Source Voltage - V
= −55°C
I
I
D
D
−25°C
-1
- Drain Current - A
= −36 A
25°C
-2
−18 A
−8 A
125°C
150°C
175°C
-10
75°C
-3
T
NP36P04SDG
ch
-10
= −55°C
-15
−25°C
125°C
150°C
175°C
25°C
75°C
-4
Pulsed
-100
-20
-5