VSMG2720 Vishay, VSMG2720 Datasheet - Page 2

• Manufacturer Part Number: VSMG2720
• Description: High Speed Infrared Emitting Diode, Rohs Compliant, 830 Nm, Gaalas Double Hetero
• Manufacturer: Vishay

VSMG2720
Vishay Semiconductors
Note
T
www.vishay.com
2
amb
BASIC CHARACTERISTICS
PARAMETER
Forward voltage
Temperature coefficient of V
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of φ
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of λ
Rise time
Fall time
Cut-off frequency
Virtual source diameter
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
= 25 °C, unless otherwise specified
21343
180
160
140
120
100
80
60
40
20
0
0
R
10 20 30 40 50 60 70 80 90 100
thJA
T
amb
= 250 K/W
- Ambient Temperature (°C)
e
p
F
For technical questions, contact: [e-mail]
I
High Speed Infrared Emitting Diode, RoHS
Compliant, 830 nm, GaAlAs Double Hetero
DC
V
I
I
I
R
F
F
F
= 70 mA, I
I
I
= 0 V, f = 1 MHz, E = 0
TEST CONDITION
= 100 mA, t
= 100 mA, t
= 100 mA, t
F
F
= 1 A, t
= 1 A, t
I
I
I
I
I
I
F
F
F
F
F
F
I
V
F
= 100 mA
= 100 mA
= 100 mA
= 100 mA
= 100 mA
= 100 mA
R
= 1 mA
= 5 V
p
p
AC
= 100 µs
= 100 µs
p
p
p
= 30 mA pp
= 20 ms
= 20 ms
= 20 ms
SYMBOL
TK
TKφ
TKλ
Fig. 2 - Forward Current Limit vs. Ambient Temperature
Δλ
V
V
C
φ
λ
I
I
I
ϕ
f
d
t
t
R
e
e
r
c
e
p
f
21344
F
F
VF
j
e
p
120
100
80
60
40
20
0
0
MIN.
10
R
8
thJA
T
amb
20 30 40
= 250 K/W
- Ambient Temperature (°C)
- 0.35
TYP.
1.45
- 1.8
± 60
0.25
0.67
125
135
830
2.1
14
45
40
15
15
24
50 60 70 80
Document Number: 81597
MAX.
1.6
10
24
Rev. 1.1, 28-Nov-08
90 100
mW/sr
mW/sr
UNIT
mV/K
nm/K
MHz
mW
%/K
deg
mm
nm
nm
µA
pF
ns
ns
V
V