VSMG2720 Vishay, VSMG2720 Datasheet
VSMG2720
Related parts for VSMG2720
VSMG2720 Summary of contents
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... High Speed Infrared Emitting Diode, RoHS Compliant, 830 nm, DESCRIPTION VSMG2720 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a PLCC-2 package for surface mounting (SMD). A 19" chip provides outstanding low forward voltage and radiant intensity even pulse current ...
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... VSMG2720 Vishay Semiconductors 180 160 140 120 100 R = 250 K/W 80 thJA 100 T - Ambient Temperature (°C) 21343 amb Fig Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient Reverse current Junction capacitance ...
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... Document Number: 81597 For technical questions, contact: emittertechsupport@vishay.com Rev. 1.1, 28-Nov-08 T < 50 °C amb 0.05 0.1 0.2 0.5 10 100 3 3.5 4 Fig Relative Radiant Intensity vs. Angular Displacement µ 0.001 p 1000 VSMG2720 Vishay Semiconductors 1.25 1.0 0.75 0.5 0.25 0 900 740 800 - Wavelength (nm) 16972_1 Fig Relative Radiant Power vs. Wavelength 0° 10° 20° 1.0 0.9 0.8 0.7 0.6 0.4 ...
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... VSMG2720 Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 3.5 ± 0.2 Pin identification C Ø 2.4 + 0.15 3 Drawing-No.: 6.541-5067.01-4 Issue: 5; 04.11.08 20541 SOLDER PROFILE 300 255 °C 250 240 °C 217 °C 200 150 max. 100 s max. 120 s 100 50 max. ramp up 3 °C/s max. ramp down 6 °C 100 ...
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... The removal force lies between 0.1 N and 1 removal 94 8158 speed of 5 mm/s. In order to prevent components from popping out of the blisters, the cover tape must be pulled off at an angle of 180° with regard to the feed direction. min. 75 empty compartments Carrier trailer VSMG2720 Vishay Semiconductors 10.0 9.0 120° 4.5 3.5 13.00 2 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...