LSBW13009 SemiWell Semiconductor Co., Ltd., LSBW13009 Datasheet - Page 2

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LSBW13009

Manufacturer Part Number
LSBW13009
Description
High Voltage Fast-switching Npn Power Transistor
Manufacturer
SemiWell Semiconductor Co., Ltd.
Datasheet
2/6
SBW13009
Electrical Characteristics
V
Symbol
※ Notes :
V
V
CEO(sus)
CE(sat)
I
BE(sat)
h
CEV
Pulse Test : Pulse width ≤ 300㎲, Duty cycle ≤ 2%
t
t
t
FE
t
t
t
s
s
s
f
f
f
Collector Cut-off Current
( V
Collector-Emitter Sustaining Voltage
( I
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Resistive Load
Storage Time
Fall Time
Inductive Load
Storage Time
Fall Time
Inductive Load
Storage Time
Fall Time
B
BE
= 0 )
= - 1.5V )
Parameter
( T
C
= 25 °C unless otherwise noted )
V
V
I
I
I
I
I
I
I
I
I
I
I
I
T
V
I
L
V
I
L
C
C
C
C
C
C
C
C
C
C
C
B1
B1
B1
C
C
P
CE
CE
CC
CC
= 10 mA
= 5.0A
= 8.0A
= 12A
= 8.0A
= 5.0A
= 8.0A
= 8.0A
= 5.0A
= 8.0A
= 8.0A
= 1.6A
= 1.6A
= 25
= 0.2mH
= 0.2mH
= 1.6A
= 15V
= 700V
= 700V
= 15V
Condition
V
V
V
V
clamp
clamp
T
T
T
T
V
BE(off)
BE(off)
I
C
C
C
C
B2
CC
I
V
V
I
I
= 100 °C
I
I
I
= 100 °C
I
I
I
= 100 °C
= 100 °C
C
C
B
B
B
B
B
B
B
= - 1.6A
CE
CE
= 300V
= 125V
= 300V
= 8.0A
= 1.0A
= 1.6A
= 3.0A
= 1.6A
= 1.0A
= 1.6A
= 1.6A
= 8.0A
= 5V
= 5V
= 5V
= 5V
Min
400
10
6
-
-
-
-
-
-
Typ
0.16
0.04
0.05
1.5
0.6
0.8
-
-
-
-
-
Max
0.15
1.0
5.0
0.5
1.0
1.5
2.0
1.2
1.6
1.5
3.0
0.4
2.0
0.1
2.5
30
30
-
Units
mA
V
V
V

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