STP4A60S SemiWell Semiconductor Co., Ltd., STP4A60S Datasheet
STP4A60S
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STP4A60S Summary of contents
Page 1
... Operating Junction Temperature J T Storage Temperature STG Aug, 2003. Rev 25°C unless otherwise specified ) J Condition T =107 °C C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. STP4A60S Symbol 2.T2 ○ ▼ ▲ ○ 3.Gate 1.T1 ○ TO-220 Ratings Units 600 V 4 ...
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... STP4A60S Electrical Characteristics Symbol Items Repetitive Peak Off-State I DRM Current V Peak On-State Voltage TM + Ⅰ I GT1 - Ⅱ I GT1 Gate Trigger Current - Ⅲ I GT3 + Ⅳ I GT3 + Ⅰ V GT1 - Ⅱ V GT1 Gate Trigger Voltage - Ⅲ V GT3 + Ⅳ V GT3 V Non-Trigger Gate Voltage GD Critical Rate of Rise Off-State ...
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... Fig 6. Gate Trigger Voltage vs - STP4A60S 1.0 1.5 2.0 2.5 3.0 3.5 On-State Voltage [V] Allowable Case Temperature θ θ θ θ π π 2 θ = 120 θ θ = 150 θ = 180 360° θ ...
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... STP4A60S Fig 7. Gate Trigger Current vs. Junction Temperature - Junction Temperature [ Fig 9. Gate Trigger Characteristics Test Circuit 10Ω ▼ ▲ A ● ● Test Procedure Ⅰ 4 GT1 - I GT1 - I GT3 GT3 100 150 - 10Ω 10Ω ...
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... D 5/5 mm Typ. Max. 10.1 6.7 9.47 13.3 1.4 1.7 2.5 3.4 1.4 2.7 5.15 2.6 1.55 0.6 1.0 3 STP4A60S Inch Min. Typ. Max. 0.382 0.398 0.248 0.264 0.354 0.373 0.504 0.524 0.047 0.055 0.067 0.098 0.118 0.134 0.049 0.055 0.094 0.106 0.197 0.203 0.087 0.102 0.049 0.061 0.018 0.024 0.024 0.039 0.142 φ ...