LSCF25C60 SemiWell Semiconductor Co., Ltd., LSCF25C60 Datasheet

no-image

LSCF25C60

Manufacturer Part Number
LSCF25C60
Description
Silicon Controlled Rectifiers
Manufacturer
SemiWell Semiconductor Co., Ltd.
Datasheet
1.LSCF25C60.pdf (5 pages)
Absolute Maximum Ratings
Silicon Controlled Rectifiers
Features
◆
◆
◆
◆
General Description
Standard gate triggering SCR is fully isolated package suitable for
the application where requiring high bidirectional blocking voltage
capability and also suitable for over voltage protection ,motor con-
trol circuit in power tool, inrush current limit circuit and heating
control system.
Aug, 2003. Rev. 1
Symbol
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( I
Low On-State Voltage (1.3V(Typ.)@ I
Isolation Voltage ( V
I
P
T(RMS)
V
V
I
T
I
V
I
di/dt
P
T(AV)
G(AV)
FGM
TSM
RGM
DRM
I
T
STG
ISO
GM
2
J
SemiWell
t
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
I
Critical rate of rise of on-state current
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Isolation Breakdown Voltage(R.M.S.)
Operating Junction Temperature
Storage Temperature
2
t
for Fusing
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
ISO
Semiconductor
Parameter
= 1500V AC )
Information offers: http://www.kkg.com.cn
T(RMS)
= 25 A )
( T
TM
J
= 25°C unless otherwise specified )
)
Half Sine Wave : T
180° Conduction Angle
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
t = 8.3ms
Over any 20ms period
A.C. 1 minute
Condition
C
= 69 °C
Symbol
TO-220F
2. Anode
○
SCF25C60
1
- 40 ~ 125
- 40 ~ 150
2 3
Ratings
1500
600
275
380
5.0
16
25
50
20
1
5
3. Gate
○
1. Cathode
○
Units
A/
A
°C
°C
W
W
V
A
A
A
A
V
V
2
㎲
s
1/5

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LSCF25C60 Summary of contents

Page 1

... V Isolation Breakdown Voltage(R.M.S.) ISO T Operating Junction Temperature J T Storage Temperature STG Information offers: http://www.kkg.com.cn Aug, 2003. Rev. 1 Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved 25°C unless otherwise specified ) J Condition Half Sine Wave : T C 180° Conduction Angle 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive ...

Page 2

SCF25C60 Electrical Characteristics Symbol Items Repetitive Peak Off-State I DRM Current V Peak On-State Voltage ( Gate Trigger Current ( Gate Trigger Voltage ( Non-Trigger Gate Voltage (1) GD Critical Rate of Rise Off-State ...

Page 3

Fig 1. Gate Characteristics (5V (1W) G(AV (0.2V Gate Current [mA] Fig 3. Typical Forward Voltage ...

Page 4

SCF25C60 Fig 7. Typical Holding Current 10 1 0.1 - Junction Temperature[ Information offers: http://www.kkg.com.cn 4/5 Fig 8. Power Dissipation 100 150 θ = 120 o θ = ...

Page 5

TO-220F Package Dimension Dim. Min. A 10.4 B 6.18 C 9.55 D 13.47 E 6.05 F 1.26 G 3.17 H 1. 2.51 M 1.25 N 0.45 O 0.6 φ φ 1 φ ...

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