CHA3512 United Monolithic Semiconductors, CHA3512 Datasheet - Page 2

• Manufacturer Part Number: CHA3512
• Description: 6-18ghz Low Noise Digital Variable Amplifier
• Manufacturer: United Monolithic Semiconductors

CHA3512
Electrical Characteristics on wafer
Tamb = +25° C
Vd = Pads B, D = 4.5V, Vg = Pads A, C tuned for Id = 210mA
(1) These values are representative for on-wafer measurements that are made without bonding
Symbol
RL_OUT
ATT dyn
RL_IN
wires at the RF ports.
Ref. DSCHA3512-8144 - 23 May 08
P1dB
Psat
Fop
NF
Vd
Vc
Id
G
Is
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Operating frequency range (1)
Small signal gain @ Attenuator state 0dB (1)
6-16GHz
16-18GHz
Attenuator range
Isolation @ Attenuator state 0dB & switch OFF
(1)
Output power at 1dB compression @ Attenuator
state 0dB (1)
Saturated Output power @ Attenuator state 0dB
(1)
Noise figure @ Attenuator state 0dB
Input Return Loss all attenuator states (switch
ON)
Output Return Loss all attenuator states (switch
ON and switch OFF)
Drain bias DC voltage (
Bias current @ small signal
Control voltage for Attenuator bit & SPDT switch
Tel.: [phone] - Fax : [phone]
Parameter
Pads B, D)
2/10
6-18GHz Digital Variable Amplifier
Specifications subject to change without notice
Min
-25
14
10
19
-5
6
Typ
210
-35
-15
-20
4.5
16
16
13
20
20
23
7
Max
250
18
22
-8
-6
0
Unit
dBm
dBm
GHz
mA
dB
dB
dB
dB
dB
dB
V
V