SQ3426EEV Vishay, SQ3426EEV Datasheet - Page 4

• Manufacturer Part Number: SQ3426EEV
• Description: N-channel 60 V D-s 175 ?c Mosfet
• Manufacturer: Vishay

SQ3426EEV
Vishay Siliconix
TYPICAL CHARACTERISTICS T
www.vishay.com
4
0.20
0.16
0.12
0.08
0.04
0.00
2.1
1.8
1.5
1.2
0.9
0.6
- 50
0
On-Resistance vs. Junction Temperature
I
D
- 25
On-Resistance vs. Gate-Source Voltage
1
= 3.2 A
2
V
0
T
GS
J
- Junction Temperature (°C)
3
T
- Gate-to-Source Voltage (V)
25
J
= 25 °C
4
50
V
5
GS
75
T
= 10 V
J
6
= 150 °C
100
80
76
72
68
64
60
A
7
- 50
Drain-Source Breakdown vs. Junction Temperature
= 25 °C, unless otherwise noted
125
8
I
- 25
D
150
= 1 mA
9
0
175
10
T
J
- Junction Temperature (°C)
25
50
75
100
0.001
- 0.3
- 0.6
- 0.9
- 1.2
0.01
100
0.6
0.3
0.0
0.1
10
1
- 50
125
0.0
- 25
150
Source-Drain Diode Forward Voltage
0.2
V
175
0
SD
T
J
- Source-to-Drain Voltage (V)
= 150 °C
0.4
T
Threshold Voltage
25
J
- Temperature (°C)
50
0.6
S09-1853-Rev. A, 21-Sep-09
75
Document Number: 65351
I
D
0.8
= 250 µA
100
T
J
= 25 °C
125
I
D
1.0
= 5 mA
150
1.2
175