SQ3426EEV Vishay, SQ3426EEV Datasheet - Page 3

• Manufacturer Part Number: SQ3426EEV
• Description: N-channel 60 V D-s 175 ?c Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS T
Document Number: 65351
S09-1853-Rev. A, 21-Sep-09
0.005
0.004
0.003
0.002
0.001
0.000
15
12
25
20
15
10
5
0
9
6
3
0
0
0
0
Gate Current vs. Gate-Source Voltage
T
C
= 25 °C
V
2
6
GS
1
V
V
GS
DS
= 10 V thru 5 V
Output Characteristics
T
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
C
V
Transconductance
I
GS
= - 55 °C
D
T
- Drain Current (A)
C
12
= 4 V
2
4
= 125 °C
18
3
6
T
J
A
= 25 °C
= 25 °C, unless otherwise noted
24
8
4
10
30
5
10
10
10
10
10
0.15
0.12
0.09
0.06
0.03
0.00
-10
15
12
-2
-4
-6
-8
9
6
3
0
0
0
0
T
J
= 150 °C
Gate Current vs. Gate-Source Voltage
On-Resistance vs. Drain Current
6
1
3
V
V
GS
GS
Transfer Characteristics
- Gate-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
I
D
T
C
- Drain Current (A)
12
= 125 °C
2
6
T
C
= 25 °C
Vishay Siliconix
18
SQ3426EEV
3
9
T
J
= 25 °C
V
V
GS
T
GS
www.vishay.com
C
24
12
4
= 4.5 V
= - 55 °C
= 10 V
30
15
5
3