SQ3426EEV Vishay, SQ3426EEV Datasheet
SQ3426EEV
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SQ3426EEV Summary of contents
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... 0 ° ° stg SYMBOL c PCB Mount R thJA R thJF SQ3426EEV Vishay Siliconix ® Power MOSFET d Product Requirements at: LIMIT UNIT 60 V ± 12 4.0 2.5 0 1 175 °C LIMIT UNIT 110 °C/W 40 www ...
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... SQ3426EEV Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... D Transconductance Document Number: 65351 S09-1853-Rev. A, 21-Sep- °C, unless otherwise noted ° SQ3426EEV Vishay Siliconix - 150 ° ° - Gate-to-Source Voltage (V) GS Gate Current vs. Gate-Source Voltage 15 12 ...
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... SQ3426EEV Vishay Siliconix TYPICAL CHARACTERISTICS 1.5 1.2 0.9 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 0.20 0.16 0. 0.08 0. ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-Source Voltage www.vishay.com °C, unless otherwise noted A 100 0.01 0.001 100 ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65351. Document Number: 65351 S09-1853-Rev. A, 21-Sep- Square Wave Pulse Duration (s) Normalized thermal Transient Impedance, Junction-to-Case SQ3426EEV Vishay Siliconix Notes ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...