IXZR16N60 IXYS Corporation, IXZR16N60 Datasheet - Page 2

• Manufacturer Part Number: IXZR16N60
• Description: Ixzr16n60
• Manufacturer: IXYS Corporation

IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
5,034,796
5,381,025
6,731,002
Symbol
R
C
C
C
C
T
T
T
T
Source-Drain Diode
Symbol
I
I
V
T
S
SM
d(on)
on
d(off)
off
rr
SD
G
iss
oss
rss
stray
4,860,072
5,049,961
5,640,045
Test Conditions
V
f = 1 MHz
Back Metal to any Pin
V
I
R
Test Conditions
V
Repetitive; pulse width limited by
T
I
300µs, duty cycle ≤2%
D
F
JM
GS
GS
GS
G
= I
= 0.5 I
= 1 Ω (External)
= 0 V, V
= 15 V, V
= 0 V
s,
V
GS
DM
=0 V, Pulse test, t ≤
DS
DS
= 0.8 V
= 0.8 V
4,881,106
5,063,307
6,404,065
DSS(max)
DSS
,
Characteristic Values
(
Characteristic Values
(
T
T
J
J
4,891,686
5,187,117
6,583,505
= 25°C unless otherwise specified)
= 25°C unless otherwise specified)
min.
min.
1930
TBD
17.8
typ.
typ.
125
33
4,931,844
5,237,481
6,710,463
4
4
4
6
max.
max.
108
IXZR16N60 & IXZR16N60A/B
1.5
18
1
Z-MOS RF Power MOSFET
pF
pF
pF
pF
ns
ns
ns
ns
ns
Ω
Α
A
V
5,017,508
5,486,715
6,727,585
1 2 3
60 : 1=G, 2=D, 3=S
60A: 1=G, 2=S, 3= D
60B: 1=D, 2=S, 3=G