IXZR16N60 IXYS Corporation, IXZR16N60 Datasheet
IXZR16N60
Manufacturer Part Number
IXZR16N60
Description
Ixzr16n60
Manufacturer
IXYS Corporation
Datasheet
1.IXZR16N60.pdf
(3 pages)
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
P
P
R
R
Symbol
V
V
I
I
R
g
T
T
T
T
Weight
D25
DM
AR
GSS
DSS
NChannel Enhancement Mode
N-Channel Enhancement Mode Switch Mode RF MOSFET
Low
Low Capacitance Z-MOS
High dv/dt
Optimized for RF Operation
Nanosecond Switching
Ideal for Class C, D, & E Applications
fs
J
JM
stg
L
DSS
DGR
GS
GSM
AR
DC
DHS
DAMB
DSS
GS(th)
thJC
thJHS
DS(on)
Q
g
and
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
I
T
T
Test Conditions
V
V
V
V
V
V
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
V
1.6mm(0.063 in) from case for 10 s
S
S
J
J
c
c
c
c
j
c
c
GS
DS
GS
DS
GS
GS
DS
≤ I
= 0
≤ 150°C, R
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C, Derate 4.4W/°C above 25°C
= 25°C
R
=0
DM
= V
= 0.8V
= 50V, I
= 0 V, I
= ±20 V
= 20 V, I
g
, di/dt ≤ 100A/µs, V
GS
, I
DSS
D
D
D
DC
D
G
= 4 ma
= 250µΑ
= 0.5I
, V
= 0.5I
= 0.2Ω
DS
D25
= 0
D25
GS
, pulse test
TM
= 1 MΩ
T
T
DD
J
J
MOSFET Process
= 25C
=125C
≤ V
DSS
JM
,
Characteristic Values
(
T
J
= 25°C unless otherwise specified)
min.
600
-55
-55
3.5
0.437
4.25
15.2
typ.
175
300
3.5
Maximum Rat-
>200 V/ns
TBD
TBD
TBD
TBD C/W
TBD C/W
600
600
±20
±30
3.0
+ 175
max.
+175
18
90
18
±100
5 V/ns
6.5
50
IXZR16N60 & IXZR16N60A/B
1
ings
mJ
Z-MOS RF Power MOSFET
W
W
W
V
V
V
V
A
A
A
mA
nA
µA
°C
°C
°C
°C
Ω
V
V
S
g
Features
•
−
−
−
•
•
−
−
•
•
•
Advantages
•
•
•
•
Isolated Substrate
IXYS advanced Z-MOS process
Low gate charge and capacitances
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
High Performance RF Z-MOS
Optimized for RF and high speed
Common Source RF Package
Isolated Package, no insulator
required
high isolation voltage (>2500V)
excellent thermal transfer
Increased temperature and power
cycling capability
easier to drive
faster switching
Low R
V
I
R
P
D25
DSS
DC
DS(on)
A = Gate Source Drain
B = Drain Source Gate
DS(on)
=
=
=
=
0.44 Ω
18.0 A
600 V
TM
TBD
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IXZR16N60 Summary of contents
Page 1
... Pulse test, t ≤ 300µS, duty cycle d ≤ 50V 0.5I , pulse test D25 stg 1.6mm(0.063 in) from case for Weight IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET Maximum Rat- ings 600 V 600 V ±20 V ± TBD ...
Page 2
... DSS(max) 17 DSS 4 6 Characteristic Values ( T = 25°C unless otherwise specified) J min. typ. TBD 4,891,686 4,931,844 5,187,117 5,237,481 6,583,505 6,710,463 IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET max. Ω 1=G, 2=D, 3=S ns 60A: 1=G, 2= 60B: 1=D, 2=S, 3=G max. Α 18 108 A 1.5 ...
Page 3
... IXZR16N60 & IXZR16N60A/B Crss 200 300 400 Vds in Volts Z-MOS RF Power MOSFET Ciss Coss 500 600 Doc #dsIXZR16N60_A/B REV 07/04 © 2004 IXYS RF An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: info@ixysrf.com Web: http://www.ixysrf.com ...