RM300DG-90S Mitsumi Electronics, Corp., RM300DG-90S Datasheet - Page 3

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RM300DG-90S

Manufacturer Part Number
RM300DG-90S
Description
Super Low Noise Ingaas Hemt
Manufacturer
Mitsumi Electronics, Corp.
Datasheet
High Voltage Diode Module
THERMAL CHARACTERISTICS
MECHANICAL CHARACTERISTICS
PERFORMANCE CURVES
High Voltage Diode Module
R
R
M
M
m
CTI
D
D
L
R
Symbol
Symbol
P CE
th(j-c)
th(c-f)
a
s
CC’+EE’
t
s
600
500
400
300
200
100
0
0
Thermal resistance
Contact thermal resistance
Mounting torque
Mass
Comparative tracking index
Clearance
Creepage distance
Internal inductance
Internal lead resistance
1
FORWARD CHARACTERISTICS
FORWARD VOLTAGE V
2
Item
Item
3
(TYPICAL)
4
5
Junction to case
(per 1/2 module)
Case to Fin, λ
D
M8: Main terminals screw
M6: Mounting screw
T
F
c
6
(c-f)
(V)
T
T
= 25 °C
j
j
= 25°C
= 125°C
=100µm, (per 1/2 module)
7
8
grease
= 1W/m·K
Conditions
Conditions
3
0.6
0.5
0.4
0.3
0.2
0.1
MITSUBISHI HIGH VOLTAGE DIODE MODULE
0
0
V
T
j
R
= 125°C, L
= 2250V, di/dt = 800A/µs
100
REVERSE RECOVERY ENERGY
FORWARD CURRENT I
200
CHARACTERISTICS
S
HIGH POWER SWITCHING USE
= 100nH
(TYPICAL)
300
Min
Min
600
7.0
3.0
26
56
400
RM300DG-90S
Limits
Limits
500
48.0
0.27
Typ
Typ
1.0
44
F
INSULATED TYPE
(A)
600
Max
66.0
Max
15.0
6.0
700
May 2009
K/kW
K/kW
Unit
Unit
N·m
N·m
mm
mm
mΩ
nH
kg

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