RM300DG-90S Mitsumi Electronics, Corp., RM300DG-90S Datasheet - Page 2

• Manufacturer Part Number: RM300DG-90S
• Description: Super Low Noise Ingaas Hemt
• Manufacturer: Mitsumi Electronics, Corp.

High Voltage Diode Module
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
Note 1. It doesn't include the voltage drop by internal lead resistance.
High Voltage Diode Module
V
V
V
I
I
I
V
V
T
T
T
I
V
t
I
Q
E
F
FSM
2
RRM
rr
rr
Symbol
Symbol
op
stg
e
j
RRM
RSM
R(DC)
t
iso
FM
rec
rr
2. E
rec
is the integral of 0.1V
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Reverse DC voltage
DC forward current
Surge forward current
Current-squared, time integration
Isolation voltage
Partial discharge extinction voltage
Junction temperature
Operating temperature
Storage temperature
Repetitive reverse current
Forward voltage
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Reverse recovery energy (Note 2)
Item
Item
R
x 0.1Irr x dt.
(Note 1)
T
T
T
T
T
Half sign wave
T
Half sign wave
Charged part to the baseplate
RMS sinusoidal, 60Hz 1min.
RMS sinusoidal, 60Hz, Q
V
I
V
di/dt = –800 A/µs
L
F
s
j
j
j
C
j
j
R
RM
=100nH, T
= 25 °C
= 25 °C
= 25 °C
= 25 °C start, t
= 25 °C start, t
= 300 A
= 25 °C
= 2250 V, I
= V
RRM
j
= 125 °C
F
= 300 A
w
w
= 8.3 ms
= 8.3 ms
Conditions
Conditions
2
PD
—
—
—
≤ 10
PC
MITSUBISHI HIGH VOLTAGE DIODE MODULE
T
T
T
T
j
j
j
j
= 25 °C
= 125 °C
= 25 °C
= 125 °C
HIGH POWER SWITCHING USE
Min
—
—
—
—
—
—
—
—
RM300DG-90S
–40 ~ +150
–40 ~ +125
–40 ~ +125
Ratings
10200
Limits
4500
4500
3000
2400
5100
4.80
4.15
0.33
300
280
250
Typ
0.5
1.0
24
—
INSULATED TYPE
Max
—
—
—
—
—
—
10
1
May 2009
kA
Unit
Unit
mA
J/P
µC
°C
°C
°C
µs
V
V
V
A
A
V
V
V
A
2
s