BLW97 NXP Semiconductors, BLW97 Datasheet - Page 6

• Manufacturer Part Number: BLW97
• Description: Hf Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
APPLICATION INFORMATION
R.F. performance in s.s.b. class-AB operation (linear power amplifier).
V
Note
1. The stated intermodulation distortion levels are referred to the according level of either of the equal amplified tones.
August 1986
handbook, full pagewidth
CE
OUTPUT POWER
HF power transistor
Relative to the according peak envelope powers these figures should be increased by 6 dB.
= 28 V; T
50
175 (PEP)
W
h
= 25 C; f
C2
C1
typ. 13,0
1
= 28,000 MHz; f
C3
11,5
dB
G
p
C4
L1
typ. 50
40
R1
Fig.8 Class-AB (s.s.b.) test circuit.
2
%
= 28,001 MHz.
dt
R2
C5
V BB
typ. 6,3
L2
7,8
I
A
T.U.T.
6
C
V CC
L3
L5
C7
C8
C9
typ. 34
R3
C6
30
d
dB
L4
3
(1)
MGP709
C10
C11
C12
typ. 38
C13
d
30
dB
5
(1)
C14
Product specification
50
BLW97
I
C(ZS)
0,1
A