BLW97 NXP Semiconductors, BLW97 Datasheet - Page 4

• Manufacturer Part Number: BLW97
• Description: Hf Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
Notes
1. Measured under pulse conditions: t
2. Measured under pulse conditions: t
August 1986
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Second breakdown energy; L = 25 mH; f = 50 Hz
D.C. current gain
D.C. current gain ratio of matched devices
Collector-emitter saturation voltage
Transition frequency at f = 100 MHz
Collector capacitance at f = 1 MHz
Feedback capacitance at f = 1 MHz
Collector-flange capacitance
j
= 25 C unless otherwise specified
HF power transistor
V
I
V
open base
R
I
I
I
I
I
I
E
C
C
C
E
C
C
I
I
BE
CE
BE
E
E
= 20 mA; open collector
= i
= 10 A; V
= 10 A; V
= 25 A; I
= 0; V
= 100 mA; open base
= 10 A; V
= 20 A; V
= 0; I
= 33 V; V
= 10
e
= 0; V
CE
C
B
= 50 mA
= 28 V
CE
CE
CB
= 5 A
CB
CB
BE
(1)
= 5 V
= 5 V
= 28 V
= 28 V
= 28 V
= 0
(1)
(2)
p
p
= 500 s.
= 300 s;
(1)
= 0,02.
4
V
V
V
I
E
E
h
h
V
f
f
C
C
C
CES
T
T
FE
FE1
(BR)CES
(BR)CEO
(BR)EBO
SBO
SBR
CEsat
c
re
cf
/h
FE2
typ.
15
typ.
typ.
typ.
typ.
typ.
typ.
Product specification
to 50
230 MHz
235 MHz
380 pF
235 pF
1,2
2,4 V
4,5 pF
65 V
33 V
20 mA
20 mJ
20 mJ
30
4 V
BLW97