BB505M Renesas Electronics Corporation., BB505M Datasheet - Page 4

• Manufacturer Part Number: BB505M
• Description: Build In Biasing Circuit Mos Fet Ic Uhf Rf Amplifier
• Manufacturer: Renesas Electronics Corporation.

BB505M
Main Characteristics
Rev.1.00, Jun.14.2004, page 4 of 8
400
300
200
100
20
15
10
20
15
10
* Value on the glass epoxy board (50mm
Maximum Channel Power Dissipation Curve
5
0
5
0
100
0
Drain Current vs. Gate Resistance
V
R
Drain Current vs. Gate1 Voltage
DS
G
Ambient Temperature T
= 220 k
Gate Resistance R
= 5 V
1
Gate1 Voltage V
50
200
2
100
3
500
G1
V
V
V
G
DS
G1
G2S
150
(k )
a
(V)
= 5 V
= 5 V
(°C)
40mm
4
= 4 V
1000
200
1mm)
5
50
40
30
20
10
20
15
10
4
3
2
1
0
5
0
0
0
V
V
R
f = 1 kHz
V
V
R
f = 1 MHz
Gate2 to Source Voltage V
V
V
Drain to Source Voltage V
DS
G1
G
DS
G1
G
G2S
G1
Typical Output Characteristics
Forward Transfer Admittance
= 220 k
= 220 k
= 5 V
= 5V
= 5 V
= 5 V
= V
1
1
Gate2 to Source Voltage
= 4 V
Gate1 Voltage V
Input Capacitance vs.
1
DS
vs. Gate1 Voltage
2
2
2
3
3
G1
3
(V)
DS
G2S
4
4
(V)
(V)
3 V
2 V
4 V
5
5
4