BB505M Renesas Electronics Corporation., BB505M Datasheet

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BB505M

Manufacturer Part Number
BB505M
Description
Build In Biasing Circuit Mos Fet Ic Uhf Rf Amplifier
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BB505M
Manufacturer:
ELPIDA
Quantity:
48
BB505M
Build in Biasing Circuit MOS FET IC
UHF RF Amplifier
Features
Outline
Notes:
Absolute Maximum Ratings
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Notes: 3. Value on the glass epoxy board (50 mm
Rev.1.00, Jun.14.2004, page 1 of 8
Build in Biasing Circuit; To reduce using parts cost & PC board space.
Low noise; NF = 1.5 dB typ. at f = 900 MHz
High gain; PG = 24 dB typ. at f = 900 MHz
Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 190 V at C = 200 pF, Rs = 0 conditions.
Provide mini mold packages; MPAK-4 (SOT-143mod)
1. Marking is “ES-”.
2. BB505M is individual type number of RENESAS BBFET.
Item
MPAK-4
Symbol
Pch
V
V
Tstg
Tch
V
3
40 mm
G1S
G2S
I
DS
D
note3
2
1 mm ).
4
1
1. Source
2. Gate1
3. Gate2
4. Drain
–55 to +150
Ratings
300
150
+6
–0
+6
–0
20
6
REJ03G0365-0100Z
Unit
mW
mA
V
V
V
Jun.14.2004
C
C
(Ta = 25°C)
Rev.1.00

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BB505M Summary of contents

Page 1

... Build in ESD absorbing diode. Withstand up to 190 200 pF conditions. Provide mini mold packages; MPAK-4 (SOT-143mod) Outline Notes: 1. Marking is “ES-”. 2. BB505M is individual type number of RENESAS BBFET. Absolute Maximum Ratings Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage ...

Page 2

... BB505M Electrical Characteristics Item Drain to source breakdown voltage Gate1 to source breakdown V voltage Gate2 to source breakdown V voltage Gate1 to source cutoff current Gate2 to source cutoff current Gate1 to source cutoff voltage Gate2 to source cutoff voltage Drain current Forward transfer admittance Input capacitance Output capacitance ...

Page 3

... BB505M 900 MHz Power Gain, Noise Figure Test Circuit ( ) Input L3: 29 Rev.1.00, Jun.14.2004, page RFC Variable Capacitor (10 pF MAX Disk Capacitor (1000 pF) ...

Page 4

... BB505M Main Characteristics Maximum Channel Power Dissipation Curve 400 300 200 100 0 50 Ambient Temperature T * Value on the glass epoxy board (50mm Drain Current vs. Gate1 Voltage 220 Gate1 Voltage V Drain Current vs. Gate Resistance ...

Page 5

... BB505M Power Gain vs. Gate Resistance G2S f = 900 MHz 100 200 Gate Resistance R Power Gain vs. Gate2 to Source Voltage 220 900 MHz Gate2 to Source Voltage V Gain Reduction vs. ...

Page 6

... BB505M S Parameter vs. Frequency -.2 -.4 -.6 -.8 -1 Condition 220 1000 MHz (50 MHz Step) S Parameter vs. Frequency 12 90° 120° 150° 180° -150° -120° -90° Condition ...

Page 7

... BB505M S parameter S11 f (MHz) MAG ANG 50 0.991 -2.4 100 0.991 -5.9 150 0.993 -8.9 200 0.983 -11.9 250 0.977 -15.3 300 0.969 -18.5 350 0.962 -21.6 400 0.952 -25.2 450 0.944 -28.7 500 0.929 -32.2 550 0.914 -36.0 600 0.897 -40.0 650 0.881 -44.2 700 0.863 -48.3 750 0.842 -52.7 800 0.819 -57.3 850 0.797 -62.0 900 0.775 -66 ...

Page 8

... BB505M Package Dimensions + 0.1 0.4 – 0.05 + 0.1 0.4 – 0.05 Ordering Information Part Name BB505MES- 3000 Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.1.00, Jun.14.2004, page 2.95 ± 0.2 1.9 ± 0.2 0.95 0.95 + 0.1 0.4 – 0.05 + 0.1 0.6 – 0.05 ...

Page 9

Sales Strategic Planning Div. Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble ...

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