BB505M Renesas Electronics Corporation., BB505M Datasheet - Page 2

• Manufacturer Part Number: BB505M
• Description: Build In Biasing Circuit Mos Fet Ic Uhf Rf Amplifier
• Manufacturer: Renesas Electronics Corporation.

BB505M
Electrical Characteristics
Drain to source breakdown
voltage
Gate1 to source breakdown
voltage
Gate2 to source breakdown
voltage
Gate1 to source cutoff current
Gate2 to source cutoff current
Gate1 to source cutoff voltage
Gate2 to source cutoff voltage
Drain current
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
Bias Circuit for Operating Items (I
Rev.1.00, Jun.14.2004, page 2 of 8
Item
V
G2
V
V
Symbol
V
V
V
(BR)G1SS
(BR)G2SS
(BR)DSS
I
I
G1S(off)
G2S(off)
I
C
C
G1SS
G2SS
|y
C
D(op)
PG
NF
oss
iss
rss
fs
I
A
|
D
Gate 2
Drain
D(op)
Min
0.5
0.5
1.4
1.0
+6
+6
28
19
—
—
—
—
6
7
, |y
fs
1.75
0.03
Typ
0.7
0.7
1.4
1.5
11
33
24
—
—
—
—
—
|, Ciss, Coss, Crss, NF, PG)
Gate 1
Source
+100
+100
Max
0.05
1.0
1.0
2.1
1.8
2.2
15
38
29
—
—
—
R
G
Unit
mA
mS
nA
nA
dB
dB
pF
pF
pF
V
V
V
V
V
I
I
I
V
V
V
V
V
R
V
R
V
R
V
R
D
G1
G2
V
G1S
G2S
DS
DS
DS
DS
DS
DS
G
G
G
G
G1
= 200 A, V
= +10 A, V
= +10 A, V
= 220 k
= 220 k , f = 1 kHz
= 220 k
= 220 k
= 5 V, V
= 5 V, V
= 5 V, V
= 5 V, V
= 5 V, V
= 5 V, V
= +5 V, V
= +5 V, V
Test Conditions
G2S
G1S
G1
G1
G1
G1
f = 1 MHz
f = 900 MHz
G1S
G2S
G1S
= 5 V, V
= 5 V, V
= 5 V, V
= 5 V, V
G2S
G1S
= 4 V, I
= 5 V, I
= V
= V
= V
= V
= V
G2S
DS
DS
DS
DS
G2S
G2S
G2S
G2S
D
D
(Ta = 25°C)
= 0
= 0
= 0
= 100 A
= 100 A
= 0
= 0
= 4 V
= 4 V
= 4 V
= 4 V