BB502M Renesas Electronics Corporation., BB502M Datasheet - Page 7
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BB502M
Manufacturer Part Number
BB502M
Description
Mosfets Built In Biasing Circuit Mos Fet Ic Uhf Rf Amplifier
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.BB502M.pdf
(11 pages)
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Part Number:
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Manufacturer:
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Rev.5.00 Aug 10, 2005 page 7 of 10
20
15
10
10
20
30
40
50
5
0
0
100
5
4
3
2
1
1
4
Gate2 to Source Voltage V
Drain Current vs. Gate Resistance
Gate2 to Source Voltage V
V
V
R
Gate Resistance R
DS
G2S
G
Gate2 to Source Voltage
Gate2 to Source Voltage
= 180 kΩ
= V
= 4 V
Gain Reduction vs.
3
200
Noise Figure vs.
G1
2
= 5 V
V
V
DS
G2S
2
V
R
f = 900 MHz
= V
DS
= 4 V
G
= 180 kΩ
G1
= 5 V
500
G
3
(kΩ)
= 5 V
1
G2S
G2S
(V)
(V)
1000
0
4
25
20
15
10
4
3
2
1
0
5
0
1
0
Gate2 to Source Voltage V
Gate2 to Source Voltage V
V
R
f = 1 MHz
DS
G
= 180 kΩ
Gate2 to Source Voltage
= 5 V
Gate2 to Source Voltage
Input Capacitance vs.
1
Power Gain vs.
2
2
V
R
f = 900 MHz
DS
G
3
= 180 kΩ
= 5 V
3
G2S
G2S
(V)
(V)
4
4