BB502M Renesas Electronics Corporation., BB502M Datasheet - Page 5

• Manufacturer Part Number: BB502M
• Description: Mosfets Built In Biasing Circuit Mos Fet Ic Uhf Rf Amplifier
• Manufacturer: Renesas Electronics Corporation.

Rev.5.00 Aug 10, 2005 page 5 of 10
200
150
100
50
20
16
12
20
16
12
8
4
8
4
0
0
0
Drain Current vs. Gate1 Voltage
V
R
V
R
Ambient Temperature Ta (°C)
Drain Current vs. Gate1 Voltage
DS
G
DS
G
Maximum Channel Power
Gate1 Voltage V
Gate1 Voltage V
= 120 kΩ
= 270 kΩ
= 5 V
1
1
= 5 V
50
Dissipation Curve
2
2
100
3
3
G1
G1
150
(V)
(V)
4
4
200
5
5
30
24
18
12
20
16
12
20
16
12
6
8
4
8
4
0
0
0
Drain to Source Voltage V
V
V
V
R
V
R
f = 1 kHz
Forward Transfer Admittance
Drain Current vs. Gate1 Voltage
DS
Typical Output Characteristics
G2S
G1
G
DS
G
Gate1 Voltage V
= 180 kΩ
= 120 kΩ
= V
= 5 V
Gate1 Voltage V
= 5 V
1
1
1
= 4 V
vs. Gate1 Voltage
DS
2
2
2
3
3
3
G1
3 V
G1
(V)
(V)
4
4
4
DS
4 V
(V)
2 V
5
5
5