BB502M Renesas Electronics Corporation., BB502M Datasheet - Page 2

• Manufacturer Part Number: BB502M
• Description: Mosfets Built In Biasing Circuit Mos Fet Ic Uhf Rf Amplifier
• Manufacturer: Renesas Electronics Corporation.

Absolute Maximum Ratings
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Electrical Characteristics
Drain to source breakdown voltage
Gate1 to source breakdown voltage
Gate2 to source breakdown voltage
Gate1 to source cutoff current
Gate2 to source cutoff current
Gate1 to source cutoff voltage
Gate2 to source cutoff voltage
Drain current
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
Rev.5.00 Aug 10, 2005 page 2 of 10
Item
Item
V
V
Symbol
V
V
V
(BR)G1SS
(BR)G2SS
Coss
(BR)DSS
I
I
Crss
I
Ciss
G1S(off)
G2S(off)
G1SS
G2SS
|y
D(op)
PG
NF
fs
|
Symbol
V
V
Tstg
Pch
Tch
V
G1S
G2S
I
DS
D
Min
0.5
0.5
1.4
0.7
+6
+6
20
17
—
—
—
—
6
8
0.02
Typ
0.7
0.7
1.7
1.1
1.6
11
25
22
—
—
—
—
—
+100
+100
Max
0.05
1.0
1.0
2.0
1.5
2.2
14
30
—
—
—
—
–55 to +150
Ratings
150
150
+6
–0
+6
–0
20
Unit
6
mA
mS
nA
nA
pF
pF
pF
dB
dB
V
V
V
V
V
I
I
I
V
V
V
I
V
I
V
V
V
R
V
V
f = 1 MHz
V
V
f = 900 MHz
D
G1
G2
D
D
G1S
G2S
DS
DS
DS
G2S
DS
DS
G2S
DS
G2S
G
= 200 µA, V
= 100 µA
= 100 µA
= +10 µA, V
= +10 µA, V
= 180 kΩ, f = 1 kHz
= 5 V, V
= 5 V, V
= 5 V, V
= 5 V, V
= 5 V, V
= 5 V, V
= +5 V, V
= +5 V, V
= 4 V, R
=4 V, R
=4 V, R
Test conditions
G2S
G1S
G1
G1
G1
G1
G
G
G
G1S
G2S
G1S
= 180 kΩ
= 180 kΩ
= 5 V
= 5 V, V
= 5 V
= 5 V
= 180 kΩ
G2S
G1S
= 4 V
= 5 V
= V
= V
= V
Unit
mW
= V
= V
mA
°C
°C
V
V
V
(Ta = 25°C)
(Ta = 25°C)
G2S
DS
DS
DS
DS
G2S
= 0
= 0
= 0
= 0
= 0
=4 V