PMMT591A NXP Semiconductors, PMMT591A Datasheet - Page 3

• Manufacturer Part Number: PMMT591A
• Description: Pnp Biss Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Jan 13
R
I
I
I
h
V
V
V
C
f
amb
SYMBOL
CBO
CEO
EBO
T
SYMBOL
FE
CEsat
BEsat
BE
th(j-a)
c
PNP BISS transistor
= 25 C unless otherwise specified.
collector cut-off current
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
transition frequency
thermal resistance from junction to ambient
p
300 s;
PARAMETER
0.02.
PARAMETER
I
I
I
V
note 1
I
V
I
I
E
B
C
C
E
C
CE
CE
I
I
I
I
I
I
I
= 0; V
= 0; V
= I
= 0; V
= 1 A; I
= 50 mA; V
C
C
C
C
C
C
C
= 5 V; note 1
= 5 V; I
= 1 mA
= 100 mA
= 500 mA
= 1 A
= 100 mA; I
= 500 mA; I
= 1 A; I
e
3
= 0; V
CB
CE
EB
B
= 30 V
= 30 V
= 5 V
CB
note 1
= 50 mA; note 1
C
B
CONDITIONS
= 1 A; note 1
= 100 mA
CE
= 10 V; f = 1 MHz
CONDITIONS
B
B
= 10 V; f = 100 MHz
= 1 mA
= 20 mA
VALUE
500
300
300
250
160
150
MIN. MAX. UNIT
Product specification
PMMT591A
800
12
100
100
100
200
350
500
1.1
1
UNIT
K/W
nA
nA
nA
mV
mV
mV
V
V
pF
MHz