PMMT591A NXP Semiconductors, PMMT591A Datasheet - Page 2

• Manufacturer Part Number: PMMT591A
• Description: Pnp Biss Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
PNP BISS (Breakthrough In Small Signal) transistor in a
SOT23 plastic package. NPN complement: PMMT491A.
MARKING
Note
1. * = p : Made in Hong Kong.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Jan 13
PMMT591A
PMMT591A
V
V
V
I
I
I
P
T
T
T
C
CM
BM
stg
j
amb
High current (max. 1 A)
Low collector-emitter saturation voltage ensures
reduced power consumption.
Battery powered units where high current and low power
consumption are important.
CBO
CEO
EBO
tot
PNP BISS transistor
NUMBER
SYMBOL
* = t : Made in Malaysia.
* = W : Made in China.
TYPE
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
NAME
PARAMETER
MARKING CODE
plastic surface mounted package; 3 leads
9B*
(1)
open emitter
open base
open collector
T
amb
2
DESCRIPTION
PINNING
handbook, halfpage
PACKAGE
25 C; note 1
CONDITIONS
PIN
Fig.1 Simplified outline (SOT23) and symbol.
1
2
3
Top view
base
emitter
collector
1
3
DESCRIPTION
65
65
MIN.
2
MAM256
Product specification
PMMT591A
250
+150
150
+150
40
40
5
1
2
1
MAX.
1
VERSION
SOT23
3
2
V
V
V
A
A
A
mW
C
C
C
UNIT