PHE13007 NXP Semiconductors, PHE13007 Datasheet - Page 5

• Manufacturer Part Number: PHE13007
• Description: Silicon Diffused Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
February 1999
Silicon Diffused Power Transistor
Fig.14. Test circuit for reverse bias safe operating
V
0.01
-VBB
0.1
IBon
clamp
10
1E-06
1
Fig.13. Transient thermal impedance.
Zth / (K/W)
D=
< 700V; V
0.05
0.02
Z
0.5
0.2
0.1
th j-mb
0
L
B
= f(t); parameter D = t
1E-04
= 1 H; L
cc
LB
= 150V; -V
area.
C
t / s
= 200 H.
P
D
1E-02
LC
be
t p
= 5V,3V & 1V;
T
VCC
p
D =
T.U.T.
/T
1E+00
T
t
p
t
VCL
5
Fig.15. Reverse bias safe operating area (T
IC/A
11
10
9
8
7
6
5
4
3
2
1
0
0
100
for -V
200
BE
300
VCEclamp/V
= 5V,3V & 1V.
400
500
Product specification
600
PHE13007
700
-3V
-1V
-5V
Rev 1.000
j
< T
800
jmax
)